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首頁 >2SJ55>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
2SJ550	文件：56.87 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ550	文件：95.64 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ550L	文件：95.64 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ550L	文件：56.87 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ550L-E	文件：95.64 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ550S	文件：56.87 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ550S	文件：95.64 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ550STL-E	文件：95.64 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.075?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ551	文件：95.41 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.050?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ551	文件：55.76 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=0.050?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ551L	文件：95.41 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.050?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ551L	文件：55.76 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=0.050?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ551L-E	文件：95.41 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.050?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ551S	文件：55.76 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Features ?Lowon-resistance RDS(on)=0.050?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ551S	文件：95.41 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.050?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ551STL-E	文件：95.41 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.050?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ552	文件：56.44 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ552	文件：96 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
2SJ552L	文件：56.44 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ552L	文件：96 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

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詳細參數(shù)

型號：
2SJ55
制造商：
RENESAS
制造商全稱：
Renesas Technology Corp
功能描述：
Silicon P Channel MOS FET

供應商	型號	品牌	批號	封裝	庫存	備注	價格
中科航電（深圳）電子集團有限公司	2SJ550	RENESAS/瑞薩	24+	TO263	7906200	一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系	詢價
深圳市匯萊威科技有限公司	2SJ550	HITACHI/日立	24+	TO-262	500202	免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價
深圳市科恒偉業(yè)電子有限公司	2SJ550	HITACHI	2016+	TO-263	6528	房間原裝進口現(xiàn)貨假一賠十	詢價
深圳市一線半導體有限公司	2SJ550	HIT	24+	TO-251	20000		詢價
瀚佳科技(深圳)有限公司	2SJ550	HIT	24+	TO-263	16800	絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?	詢價
深圳市鼎欣微電子有限公司	2SJ550	HITACHI/日立	21+	TO-252	30000	只做正品原裝現(xiàn)貨	詢價
艾睿國際（香港）有限公司	2SJ550	NEC	2021+	TO-263	100500	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價
深圳市航潤創(chuàng)能電子集團有限公司	2SJ550	HITACHI	21+	TO-263	607	原裝現(xiàn)貨假一賠十	詢價
深圳市國宇半導體科技有限公司	2SJ550	HITACHI/日立	23+	TO-220	10000	公司只做原裝正品	詢價
深圳市威爾健半導體有限公司	2SJ550	VBSEMI/臺灣微碧	23+	TO263	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價

更多2SJ55供應商更新時間2025-1-15 13:48:00

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