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2SJ48

LOW FREQUENCY POWER AMPLIFIER

SILICONP-CHANNELMOSFET LOWFREQUENCYPOWERAMPLIFIER ComplementaryPairwith2SK133,2SK134,2SK135

HitachiHitachi Semiconductor

日立日立公司

2SJ483

Silicon P Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance RDS(on)=0.08?typ(atVGS=–10V,ID=–2.5A) ?4Vgatedrivedevices. ?Largecurrentcapacitance ID=–5A

HitachiHitachi Semiconductor

日立日立公司

2SJ483

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.08?typ(atVGS=–10V,ID=–2.5A) ?4Vgatedrivedevices. ?Largecurrentcapacitance ID=–5A

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ483TZ-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.08?typ(atVGS=–10V,ID=–2.5A) ?4Vgatedrivedevices. ?Largecurrentcapacitance ID=–5A

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ484

Silicon P-Channel MOS FET High Speed Power Switching

Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–10V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

HitachiHitachi Semiconductor

日立日立公司

2SJ484

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–10V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ484WYTL-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–10V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ484WYTR-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.18?typ.(atVGS=–10V,ID=–1A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ485

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features ?LowONresistance. ?Ultrahigh-speedswitching. ?4Vdrive.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

2SJ486

Silicon P Channel MOS FET Low FrequencyPower Switching

Features ?Lowon-resistance RDS(on)=0.5?typ.(atVGS=–4V,ID=–100mA) ?2.5Vgatedrivedevices. ?Smallpackage(MPAK).

HitachiHitachi Semiconductor

日立日立公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SJ48

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    LOW FREQUENCY POWER AMPLIFIER

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
2000
詢價(jià)
HIT
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價(jià)
HITACHI
23+
TO-3
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HITACHI
2023+
TO-3
50000
原裝現(xiàn)貨
 詢價(jià)
HITACHI
23+
TO-3
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
RENESAS
05+
SOT223
1335
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
TOSHIBA
23+
TO251
7635
全新原裝優(yōu)勢(shì)
 詢價(jià)
RENESAS
23+
UPAK
10000
原裝正品,假一罰十
 詢價(jià)
RENESAS
2016+
SOT89
4278
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
RENESAS
24+
SOT23-3
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
更多2SJ48供應(yīng)商 更新時(shí)間2025-4-18 16:00:00

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