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2SD600

PowerAmplifierApplications

100V/120V,1ALow-FrequencyPowerAmplifierApplications Features ·HighbreakdownvoltageVCEO100/120V,Highcurrent1A. ·Lowsaturationvoltage,excellenthFElinearity.

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2SD600

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SD600

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

2SD600

iscSiliconNPNPowerTransistor

DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SD600

100V/120V,1ALow-FrequencyPowerAmplifierApplications

SANYOSanyo Semicon Device

三洋三洋電機株式會社

2SD600

100V/120V,1ALow-FrequencyPowerAmpApplications

1.HighbreakdownvoltageVCEO100/120V,Highcurrent1A. 2.Lowsaturationvoltage,excellenthFElinearity.

SANYOSanyo Semicon Device

三洋三洋電機株式會社

2SD600K

PowerAmplifierApplications

100V/120V,1ALow-FrequencyPowerAmplifierApplications Features ·HighbreakdownvoltageVCEO100/120V,Highcurrent1A. ·Lowsaturationvoltage,excellenthFElinearity.

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2SD600K

SiliconNPNtransistorinaTO-126FPlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

2SD600K

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

2SD600K

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號:

    2SD600E

  • 功能描述:

    TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126

供應商型號品牌批號封裝庫存備注價格
SANYO/三洋
2022+
3350
全新原裝 貨期兩周
詢價
SANYO/三洋
23+
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
SANYO/三洋
23+
1
6500
專注配單,只做原裝進口現(xiàn)貨
詢價
SANYO/三洋
23+
1
6500
專注配單,只做原裝進口現(xiàn)貨
詢價
SAY
16+
T0-126
10000
全新原裝現(xiàn)貨
詢價
SAY
1738+
TO-126
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價
ISC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
ISC
20+
TO-126
15800
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
24+
TO-126
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價
SANYO/國產(chǎn)
21+
TO126
3091
原裝現(xiàn)貨假一賠十
詢價
更多2SD600E供應商 更新時間2025-1-27 9:50:00