2SD2686

2SD2686是一款高性能的功率晶體管，適用于多種應用場景。 產(chǎn)品參數(shù)： 最大功率：150W 最大電壓：80V 最大電流：15A 封裝形式：TO-3P SD2686具有良好的散熱性能。相比之下，競品型號的最大功率、電壓和電流均不及2SD2686。 產(chǎn)品優(yōu)勢： 接下來，我們來比較2SD2686與競品的優(yōu)勢。 首先是性能方面，2SD2686具有更高的最大功率和電壓，能夠滿足更高的功率需求。 其次是封裝形式，TO-3P封裝具有更好的散熱性能，能夠更好地保護晶體管。 最后是價格方面，2SD2686的價格相對較低，具有更好的性價比。 應用場景： 針對不同的應用場景，2SD2686也有著廣泛的應用。 例如

2SD2600

NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications

NPNTripleDiffusedPlanarSiliconDarlingtonTransistor DriverApplications Features ?HighDCcurrentgain. ?LargecurrentcapacityandwideASO. Applications ?Motordrivers,printerhammerdrivers,relaydrivers,voltageregulatorcontrol.

2SD2604

HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE PULSE MOTOR DRIVE APPLICATIONS

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications ?HighDCcurrentgain:hFE=2000(min) ?Lowsaturationvoltage:VCE(sat)=1.5V(max)

2SD2607

For Power amplification (100V, 8A)

PowerTransistor(100V,8A) Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SB1668.

2SD261

LOW FREQUENCY POWER AMPLIFIER

[USHA] LOWFREQUENCYPOWERAMPLIFIER ?ComplementtoKSA643 ?CollectorDissipatinPc=500mW

2SD2611

Power Transistor

Features 1)Lowsaturationvoltage,typicallyVCE(sat)=0.3VatIC/IB=4/0.4A. 2)ExcellentDCcurrentgaincharacteristics. 3)PC=300W(TC=25°C) 4)WideSOA(safeoperatingarea). 5)Complementsthe2SB1672.

2SD2615

For Motor / Relay drive (120V, 6A)

ForMotor/Relaydrive(120V,6A) Structure NPNSiliconEpitaxialPlanarTransistor(Darlingtonconnection) Features 1)Darlingtonconnection,highhFE. 2)Resistorinbetweenbase-emitter. 3)Built-indamperdiode. Applications Relaydrive Motordrive

2SD2620

Silicon NPN epitaxial planer type(For low-frequency amplification)

SiliconNPNepitaxialplanartype Forlow-frequencydriveramplification ■Features ?HighforwardcurrenttransferratiohFE ?Lowcollector-emittersaturationvoltageVCE(sat) ?Highemitter-basevoltage(Collectoropen)VEBO

2SD2620J

Silicon NPN epitaxial planer type(For low-frequency amplification)

SiliconNPNepitaxialplanartype Forlow-frequencydriveramplification ■Features ?HighforwardcurrenttransferratiohFE ?Lowcollector-emittersaturationvoltageVCE(sat) ?Highemitter-basevoltage(Collectoropen)VEBO

2SD2621

Silicon NPN epitaxial planar type For low-frequency driver amplification

SiliconNPNepitaxialplanartype Forlow-frequencydriveramplification ■Features ?HighforwardcurrenttransferratiohFE ?Lowcollector-emittersaturationvoltageVCE(sat) ?Highemitter-basevoltage(Collectoropen)VEBO