首頁 >2SD2150-R-TP>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
2SD2150-R-TP | 包裝:帶盒(TB) 封裝/外殼:TO-243AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN 20V 3A SOT89 | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | |
LowFrequencyTransistor(20V,3A) Features 1)LowVCE(sat). VCE(sat)=0.2V(Typ.) (IC/IB=2A/0.1A) 2)Excellentcurrentgaincharacteristics. 3)Complementsthe2SB1424. | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
SiliconNPNtransistorinaSOT-89PlasticPackage Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentcurrentgaincharacteristic,Complementaryto2SB1424. Applications Generalpurposeamplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
LowFrequencyTransistor(20V,3A) | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
NPNPlasticEncapsulatedTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
NPNPlastic-EncapsulateTransistor FEATURES ?ExcellentCurrent-to-GainCharacteristics ?LowCollectorSaturationVoltage, ?VCE(SAT)=0.5V(Max.)forIC/IB=2A/0.1A | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
LowFrequencyTransistor ■Features ●Excellentcurrent-to-gaincharacteristics ●LowcollectorsaturationvoltageVCE(sat) ●Complementaryto2SB1412 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
NPNEpitaxialPlanarTransistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
TRANSISTORNPN) TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.5WTamb=25°C Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55°Cto+150°C | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | ||
LowFrequencyTransistor(20V,3A) Features 1)LowVCE(sat). VCE(sat)=0.2V(Typ.) (IC/IB=2A/0.1A) 2)Excellentcurrentgaincharacteristics. 3)Complementsthe2SB1424. | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
Plastic-EncapsulateTransistors FEATURES Excellentcurrent-to-gaincharacteristics LowcollectorsaturationvoltageVCE(sat) VCE(sat)=0.5V(max)forIC/IB=2A/0.1A | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | HOTTECH | ||
NPNGeneralusetransistor FEATURES Powerdissipation PCM:0.5WTamb=25°C Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55°Cto+150°C | SKTECHNOLGYSHIKE Electronics 時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司 | SKTECHNOLGY | ||
LowFrequencyTransistor(20V,3A) Features 1)LowVCE(sat). VCE(sat)=0.2V(Typ.) (IC/IB=2A/0.1A) 2)Excellentcurrentgaincharacteristics. 3)Complementsthe2SB1424. | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
NPNTransistors ■Features ●Excellentcurrent-to-gaincharacteristics ●LowcollectorsaturationvoltageVCE(sat) ●Complementaryto2SB1412 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | YFWDIODE | ||
LOWFREQUENCYTRANSISTER(20V,3A) FEATURES LowVCE(sat):VCE(sat)=0.2V(Typ.) (IC/IB=2A/0.1A). Excellentcurrentgaincharacteristics. Complementsthe2SB1424. | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
LOWFREQUENCYTRANSISTER FEATURES ●LowVCE(sat):VCE(sat)=0.2V(Typ.)(IC/IB=2A/0.1A). ●Excellentcurrentgaincharacteristics. ●Complementsthe2SB1424. | BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
NPNPlastic-EncapsulateTransistors Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?Excellentcurrent-to-gaincharacteristics ?LowcollectorsaturationvoltageVCE(sat) ?LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrati | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
NPNTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
NPNTransistors ■Features ●Excellentcurrent-to-gaincharacteristics ●LowcollectorsaturationvoltageVCE(sat) ●Complementaryto2SB1412 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | YFWDIODE | ||
NPNPlastic-EncapsulateTransistors Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?Excellentcurrent-to-gaincharacteristics ?LowcollectorsaturationvoltageVCE(sat) ?LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrati | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
2SD2150-R-TP
- 制造商:
Micro Commercial Co
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)
- 包裝:
帶盒(TB)
- 晶體管類型:
NPN
- 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):
500mV @ 100mA,2A
- 電流 - 集電極截止(最大值):
100nA(ICBO)
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):
180 @ 100mA,2V
- 頻率 - 躍遷:
290MHz
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
TO-243AA
- 供應(yīng)商器件封裝:
SOT-89
- 描述:
TRANS NPN 20V 3A SOT89
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Micro Commercial Co |
2022+ |
- |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
Micro Commercial Co |
24+ |
TO-243AA |
9350 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
24+ |
N/A |
73000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
ST(先科) |
23+ |
SOT-89 |
2980 |
三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET) |
詢價(jià) | ||
ROHM |
24+ |
SOT-89 |
10200 |
新進(jìn)庫(kù)存/原裝 |
詢價(jià) | ||
長(zhǎng)電 |
22+ |
SOT-89 |
6500 |
詢價(jià) | |||
ROHM/羅姆 |
22+ |
SOT89 |
12000 |
只做原裝、原廠優(yōu)勢(shì)渠道、假一賠十 |
詢價(jià) | ||
ROHM/羅姆 |
24+ |
SOT89 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ROHM/羅姆 |
23+ |
SOT89 |
6850 |
只做原廠原裝正品現(xiàn)貨!假一賠十! |
詢價(jià) | ||
ROHM |
24+ |
SOT-89 |
918 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
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