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2SD1895

Silicon PNP epitaxial planar type Darlington(For power amplification)

SiliconPNPepitaxialplanartypeDarlington Forpoweramplification Complementaryto2SD1895 ■Features ●Optimumfor90WHiFioutput ●HighfowardcurrenttransferratiohFE:5000to30000 ●LowcollectortoemittersaturationvoltageVCE(sat):

PanasonicPanasonic Semiconductor

松下松下電器

2SD1895

Silicon NPN triple diffusion planar type Darlington(For power amplification)

SiliconNPNtriplediffusionplanartypeDarlington Forpoweramplification Complementaryto2SB1255 ■Features ●Optimumfor90WHiFioutput ●HighfowardcurrenttransferratiohFE:5000to30000 ●LowcollectortoemittersaturationvoltageVCE(sat):

PanasonicPanasonic Semiconductor

松下松下電器

2SD1895

Silicon NPN Darlington Power Transistors

DESCRIPTION ?WithTO-3PFapackage ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?Complementtotype2SB1255 APPLICATIONS ?Poweramplification ?Optimumfor90Whigh-fidelityoutputapplications

SAVANTIC

Savantic, Inc.

2SD1895

Silicon NPN Darlington Power Transistors

DESCRIPTION ?WithTO-3PFapackage ?Optimumfor90WHiFioutput ?HighfowardcurrenttransferratiohFE ?Lowcollector-emittersaturationvoltage ?Complementtotype2SB1255 APPLICATIONS ?Poweramplification

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

2SD1895

Silicon NPN Darlington Power Transistors

DESCRIPTION ?WithTO-3PFapackage ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?Complementtotype2SB1255 APPLICATIONS ?Poweramplification ?Optimumfor90Whigh-fidelityoutputapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SD1895

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·HighDCCurrentGain- :hFE=5000(Min)@IC=7A ·Low-CollectorSaturationVoltage- :VCE(sat)=2.5V(Max.)@IC=7A ·ComplementtoType2SB1255 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforpoweramplifierapplicatio

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SD1895

Silicon NPN Darlington Power Transistors

SAVANTIC

Savantic, Inc.

2SD1895_15

Silicon NPN Darlington Power Transistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

2SD1895_2015

Silicon NPN Darlington Power Transistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

晶體管資料

  • 型號:

    2SD1895

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    160V

  • 最大電流允許值:

    8A

  • 最大工作頻率:

    20MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    2SD2438,

  • 最大耗散功率:

    100W

  • 放大倍數(shù):

    β>5000

  • 圖片代號:

    B-38

  • vtest:

    160

  • htest:

    20000000

  • atest:

    8

  • wtest:

    100

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TOP-3FA
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ISC
23+
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19960
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20+
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38900
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24+
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更多2SD1895供應(yīng)商 更新時(shí)間2024-12-25 16:00:00