| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SC607 | PNP/NPN SILICON EPITAXIAL TRANSISTOR AudioFrequencyAmplifier | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | |
NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications High-CurrentSwitchingApplications Applications ?Relaydrivers,lampdrivers,motordrivers. Features ?AdoptionofMBITprocess. ?Largecurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Silicon NPN Epitaxial Type PowerAmplifierApplications PowerSwitchingApplications Lowcollectoremittersaturationvoltage:VCE(sat)=0.5V(max)（IC=1A） High-speedswitching:tstg=0.4μs(typ) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Silicon NPN Epitaxial Type (PCT Process) PowerAmplifierApplications PowerSwitchingApplications Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Silicon NPN Epitaxial Type (PCT Process) ○PowerAmplifierApplications ○PowerSwitchingApplications ?Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)（IC=1A） ?High-speedswitching:tstg=0.4μs(typ) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Silicon NPN Epitaxial Type (PCT Process) ○PowerAmplifierApplications ○PowerSwitchingApplications ?Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)（IC=1A） ?High-speedswitching:tstg=0.4μs(typ) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Silicon NPN Epitaxial Type PowerAmplifierApplications PowerSwitchingApplications Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)（IC=1A） High-speedswitching:tstg=0.4μs(typ) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 80V 3A PW-MOLD | Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
射頻/高頻放大 （HF）_TR_輸出極 （E）
- 封裝形式：
直插封裝
- 極限工作電壓：
75V
- 最大電流允許值：
0.6A
- 最大工作頻率：
70MHZ
- 引腳數(shù)：
3
- 可代換的型號：
BC140,BC141,BC300,BC301,BC302,BFX96A,BFX97A,BSW53,BSW54,2SC959,3DA103B,
- 最大耗散功率：
1W
- 放大倍數(shù)：
- 圖片代號：
C-40
- vtest：
75
- htest：
70000000
- atest：
0.6
- wtest：
1
詳細參數(shù)
- 型號：
2SC607
- 功能描述：
PNP/NPN SILICON EPITAXIAL TRANSISTOR
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
23+ |
TO |
20000 |
正品原裝貨價格低 |
詢價 | |||
TOSHIBA |
2016+ |
TO252 |
3830 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
TOSHIBA |
2020+ |
TO252 |
1998 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
TOSHIBA |
TO252 |
37526 |
只做原裝貨值得信賴 |
詢價 | |||
TOS |
1203+ |
TO-220 |
150 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
TOS |
22+23+ |
TO-220 |
8992 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
TOSHIBA |
1822+ |
TO-252 |
6852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
SANYO |
21+ |
TO-3PF |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
PANASPONIC |
22+ |
TO-3P |
41298 |
原裝正品現(xiàn)貨,可開13個點稅 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 |
