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2SC524

HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS.

FEATURES: ?HighBreakdownVoltage:VCEO100V(2SC522) :Vceo=60V(2SC524) ?UsefulattachmentforHeatsink. ?VariousUsesforMediumPower :Ic=1.5A(Max.),Pc=10W(Max.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC5241

Switching Power Transistor(5A NPN)

SwitchingPowerTransistor

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新電元工業(yè)株式會(huì)社

2SC5241

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220Fpackage ·Highvoltage,highspeedswitching APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications

SAVANTIC

Savantic, Inc.

2SC5241

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220Fpackage ·Highvoltage,highspeedswitching APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SC5242

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3P(I)package ·Complementtotype2SA1962 ·Highcollectorvoltage:VCEO=230V(Min) APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

2SC5242

NPN Epitaxial Silicon Transistor

NPNEpitaxialSiliconTransistor Features ?HighCurrentCapability:IC=15A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=230V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SA1962/FJA42

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2SC5242

isc Silicon NPN Power Transistor

DESCRIPTION ·HighCollectorBreakdownVoltage-:V(BR)CEO=230V(Min.) ·GoodLinearityofhFE ·ComplementtoType2SA1962 APPLICATIONS ·Poweramplifierapplications ·Recommendfor80Whighfidelityaudiofrequencyamplifieroutputstageapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SC5242

Marking：C5242；NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)

PowerAmplifierApplications ?HighCollectorbreakdownvoltage:VCEO=230V(min) ?Complementaryto2SA1962 ?Suitablefrousein80-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC5242

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC5242OTU

NPN Epitaxial Silicon Transistor

NPNEpitaxialSiliconTransistor Features ?HighCurrentCapability:IC=15A ?HighPowerDissipation:130watts ?HighFrequency:30MHz. ?HighVoltage:VCEO=230V ?WideS.O.Aforreliableoperation. ?ExcellentGainLinearityforlowTHD. ?Complementto2SA1962/FJA42

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

晶體管資料

  • 型號(hào)：

    2SC524

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    射頻/高頻放大 （HF）_開(kāi)關(guān)管 （S）_功率放大 （L）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    100V

  • 最大電流允許值：

    1.5A

  • 最大工作頻率：

    60MHZ

  • 引腳數(shù)：

    3

  • 可代換的型號(hào)：

    BD139,BD169,BD179,BD230,BD237,BD379,BD441,2SD1177,2SD1178,3DK204B,

  • 最大耗散功率：

    10W

  • 放大倍數(shù)：

  • 圖片代號(hào)：

    E-36

  • vtest：

    100

  • htest：

    60000000

  • atest：

    1.5

  • wtest：

    10

詳細(xì)參數(shù)

  • 型號(hào)：

    2SC524

  • 功能描述：

    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-37VAR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOSHIBA
24+
CAN3
5600
原裝現(xiàn)貨假一罰十
 詢價(jià)
TOSHIBA/東芝
專業(yè)鐵帽
CAN3
5600
原裝鐵帽專營(yíng),代理渠道量大可訂貨
 詢價(jià)
TOSHIBA/東芝
專業(yè)鐵帽
CAN3
67500
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
23+
TO
20000
正品原裝貨價(jià)格低
 詢價(jià)
24+
TO-220
10000
全新
 詢價(jià)
TOSHIBA
11+
88
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
ROHM
17+
TO-220F
6200
詢價(jià)
Fairchild
23+
TO-3P
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
FAIRCHILD
16+
TO-3PH
10000
全新原裝現(xiàn)貨
 詢價(jià)
ROHM
23+
TO-220
5000
原裝正品,假一罰十
 詢價(jià)
更多2SC524供應(yīng)商 更新時(shí)間2025-3-3 16:22:00

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