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2SC3470

Silicon NPN Epitaxial

Application Lowfrequencyamplifier

HitachiHitachi Semiconductor

日立日立公司

2SC3474

Marking：C3474；Package：SC-71；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SC3474

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=80V(Min) ·DCCurrentGain- :hFE=500(Min)@IC=0.4A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC3474

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=80V(Min) ·DCCurrentGain- :hFE=500(Min)@IC=0.4A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC3474-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=80V(Min) ·DCCurrentGain- :hFE=500(Min)@IC=0.4A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC3474-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=80V(Min) ·DCCurrentGain- :hFE=500(Min)@IC=0.4A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC3475

isc Silicon NPN Power Transistor

DESCRIPTION ?LowCollectorSaturationVoltage :VCE(sat)=0.6V(Max)@IC=2A ?HighSwitchingSpeed APPLICATIONS ?Highspeedswitchingapplications. ?HighspeedDC-DCconverterapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SC3478

NPN SILICON TRANSISTORS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC3478A

NPN SILICON TRANSISTORS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC3479

isc Silicon NPN Power Transistor

DESCRIPTION ?HighBreakdownVoltage-:VCBO=1500V(Min) ?HighSwitchingSpeed ?HighReliability ?Built-inDamperDiode APPLICATIONS ?DesignedforhighdefinitionCRTdisplayhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

晶體管資料

  • 型號：

    2SC3470

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    通用型 （Uni）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    55V

  • 最大電流允許值：

    0.1A

  • 最大工作頻率：

    230MHZ

  • 引腳數(shù)：

    3

  • 可代換的型號：

    BC237,BC547,BF240,BF241,BF254,BF255,2SC1740S,2SC2785,2SC3113,2SC3312,2SC3330,2SC4266,3DG120C,

  • 最大耗散功率：

    0.3W

  • 放大倍數(shù)：

  • 圖片代號：

    A-57

  • vtest：

    55

  • htest：

    230000000

  • atest：

    0.1

  • wtest：

    0.3

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
41
23+
to-92s
32652
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價(jià)
HGF
24+
TO-92
9862
全新原裝現(xiàn)貨/假一罰百!
 詢價(jià)
HGF
23+
TO-92
7600
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HGF
23+
TO-92
7600
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
TOS
23+
TO
20000
正品原裝貨價(jià)格低
 詢價(jià)
24+
TO-220
10000
全新
 詢價(jià)
SANYO
16+
TO-220
100000
全新原裝現(xiàn)貨
 詢價(jià)
HIT
1738+
TO-220
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
HITACHI
TO-220
22+
6000
十年配單,只做原裝
 詢價(jià)
TOSHIBA
24+/25+
1082
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
更多2SC347供應(yīng)商 更新時(shí)間2025-4-13 11:10:00

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