2SC2655L-O

NPN Plastic-Encapsulate Transistor

2SC2655L-O

NPN Plastic Encapsulated Transistor

2SC2655L-O-T9N-B

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

2SC2655L-O-T9N-K

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

2SC2655L-O-T9N-R

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

2SC2655L-O-AP

Package：TO-226-3，TO-92-3（TO-226AA）成形引線；包裝：帶盒（TB） 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 50V 2A TO92

2SC2655L-Y

NPNPlastic-EncapsulateTransistor

2SC2655L-Y

NPNPlasticEncapsulatedTransistor

2SC2655M

TO-92MODPlastic-EncapsulateTransistors

FEATURES LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) HighSpeedSwitchingTime:tstg=1μs(Typ.) Complementaryto2SA1020

2SC2655-O

NPNPlastic-EncapsulateTransistor

Features ?Collectorof0.9WattsofPowerDissipation. ?Collector-current2.0A ?Operatingandstoragejunctiontemperaturerange:-55
to+150
?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHS

2SC2655-Y

NPNPlastic-EncapsulateTransistor

Features ?Collectorof0.9WattsofPowerDissipation. ?Collector-current2.0A ?Operatingandstoragejunctiontemperaturerange:-55
to+150
?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHS

2SC2655-Y

PowerAmplifierApplicationsPowerSwitchingApplications

PowerAmplifierApplications PowerSwitchingApplications ?Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) ?Highcollectorpowerdissipation:PC=900mW ?High-speedswitching:tstg=1.0μs(typ.) ?Complementaryto2SA1020.

ST2SC2655

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. ThetransistorissubdividedintotwogroupsOandY, accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.