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2SC1970

isc Silicon NPN Power Transistor

DESCRIPTION ?HighPowerGain- :Gpe≥9.2dB,f=175MHz,PO=1W;VCC=13.5V ?HighReliability APPLICATIONS ?DesignedforRFpoweramplifiersonVHFbandmobileradioapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC1971

Marking：C1971；Package：T-30E；NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971isasiliconNPNepitaxailplanartypetransistordesignedforRFPowerAmplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10dB, @VCC=13.5V,Po=6W,f=175MHz ●Emitterballastedconstruction,goldmetallizationforhigh reliabil

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1971

isc Silicon NPN Power Transistor

DESCRIPTION ?HighPowerGain- :Gpe≥10dB,f=175MHz,PO=6W;VCC=13.5V ?HighReliability APPLICATIONS ?DesignedforRFpoweramplifiersonVHFbandmobileradioapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC1971

silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio

DESCRIPTION 2SC1971isasiliconNPNepitaxailplanartypetransistordesignedforRFPowerAmplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10dB, @VCC=13.5V,Po=6W,f=175MHz ●Emitterballastedconstruction,goldmetallizationforhigh reliabil

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

2SC1971

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASI2SC1971isDesignedforRFpoweramplifiersonVHFbandmobileradioapplications. FEATURESINCLUDE: ?ReplacesOriginal2SC1971inMostApplications ?HighGainReducesDriveRequirements ?EconomicalTO-220CEPackage

ASI

Advanced Semiconductor

2SC1971-01

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971isasiliconNPNepitaxailplanartypetransistordesignedforRFPowerAmplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10dB, @VCC=13.5V,Po=6W,f=175MHz ●Emitterballastedconstruction,goldmetallizationforhigh reliabil

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1972

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

2SC1972

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASI2SC1972isDesignedforRFpoweramplifiersonVHFbandmobileradioapplications. FEATURESINCLUDE: ?ReplacesOriginal2SC1972inMostApplications ?HighGainReducesDriveRequirements ?EconomicalTO-220CEPackage

ASI

Advanced Semiconductor

2SC1972

Silicon NPN RF Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=17V(Min) APPLICATIONS ·10to14WattsOutputPowerAmplifiersInVHFBandMobileRadioApplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC1973

TRANSISTOR NPN EPITAXIAL PLANAR

2SC1973 RFAmplifierandDriver Features ●Highgain ●HighfT ●LowCob 2SC1980 HighVoltage,Low-noiseAmplifier ComplementaryPairwith2SA921 Features ●HighVCEO ●LowNV 2SC2076 RFAmplifier Features ●SuitableforRFamp.,OSC,mix.andIFamp.inFM/AMradios. ●Largewith

PanasonicPanasonic Semiconductor

松下松下電器

供應商型號品牌批號封裝庫存備注價格
MITSUBISHI/三菱
23+
1688
房間現(xiàn)貨庫存:QQ:373621633
 詢價
三菱
24+
TO220
5000
原裝正品 特價現(xiàn)貨(香港 新加坡 日本)
 詢價
MITSUBISHI
24+
TO220
4125
詢價
三菱
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應
 詢價
MITSUBIS
23+
TO-220
550
專營高頻管模塊,全新原裝!
 詢價
三菱
23+
TO-220
3000
全新原裝
 詢價
MITSUBISHI
24+
三極管
3560
原裝現(xiàn)貨假一罰十
 詢價
臺產
16+
TO220
2000
全新原裝現(xiàn)貨
 詢價
ISC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
三菱
25+23+
TO-220
15568
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
更多2SC197供應商 更新時間2025-6-12 10:31:00

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