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2SB1412

Low Frequency Transistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SB1412

PNP EPITAXIAL PLANAR TRANSISTOR

Features: *ExcellentDCCurrentGainCharacteristics *LowVCE(Sat)

WEITRON

Weitron Technology

2SB1412

HIGH VOLTAGE SWITCHING TRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1412

Low Frequency Transistor

Features ●LowVCE(sat). ●PNPsilicontransistor.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SB1412

PNP Silicon Low Frequency Transistor

Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SB1412

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES PowerAmplifierApplications

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SB1412

isc Silicon NPN Power Transistor

DESCRIPTION ?Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller ?Lowcollector-to-emittersaturationvoltage ?Fastswitchingspeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Poweramplifie

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1412

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

2SB1412

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1412

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1412

HIGH VOLTAGE SWITCHING TRANSISTOR

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1412

Low frequency transistor (−20V, −5A)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SB1412

Low frequency transistor (−20V,−5A)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SB1412-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1412-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1412L-TN3-B-R

HIGH VOLTAGE SWITCHING TRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1412L-TN3-C-R

HIGH VOLTAGE SWITCHING TRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1412L-TN3-E-R

HIGH VOLTAGE SWITCHING TRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1412L-TN3-F-R

HIGH VOLTAGE SWITCHING TRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1412-TN3-B-R

HIGH VOLTAGE SWITCHING TRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCUnisonic Technologies

友順友順科技股份有限公司

晶體管資料

  • 型號：

    2SB1412

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-PNP

  • 性質(zhì)：

    低頻或音頻放大 （LF）_功率放大 （L）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    20V

  • 最大電流允許值：

    10A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號：

    2SA1242,2SA1385,2SB1205,2SB1447,

  • 最大耗散功率：

    10W

  • 放大倍數(shù)：

  • 圖片代號：

    H-65

  • vtest：

    20

  • htest：

    999900

  • atest：

    10

  • wtest：

    10

詳細參數(shù)

  • 型號：

    2SB1412

  • 制造商：

    ROHM Semiconductor

  • 功能描述：

    5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
ROHM/羅姆
24+
TO-252
4769
只做原廠渠道 可追溯貨源
 詢價
ROHM
13+
SOT252
3151
原裝正品
 詢價
CJ/長晶
20+
SOT-223
120000
原裝正品 可含稅交易
 詢價
CJ/長電
2021+
TO-252
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
CJ/長晶
23+
SOT-223
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
CJ/長電
24+
SOT223(8R)
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
 詢價
NK/南科功率
TO-252
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低
 詢價
ROHM
24+
SOT252
10000
詢價
ROHM
08PB
SOT252/2.5
1570
全新原裝進口自己庫存優(yōu)勢
 詢價
ROHM
23+
TO252
1600
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
更多2SB1412供應(yīng)商 更新時間2025-1-11 16:36:00

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