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2SB1314

FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

[Isahaya] DESCRIPTION Mitsubishi2SB1314isasiliconPNPepitaxialplanartypepowertransistorusinginsulatedfullmoldpackage.

ETCList of Unclassifed Manufacturers

未分類制造商

2SB1314

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

DESCRIPTION Mitsubishi2SB1314isasiliconPNPepitaxialplanartypepowertransistorusinginsulatedfullmoldpackage. APPLICATION Powersupplycircuit,solenoiddrive.

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會社

2SB1315

Silicon PNP Power Transistors

DESCRIPTION ?WithTO-3PMLpackage ?Lowcollectorsaturationvoltage APPLICATIONS ?Foruseinlowfrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

2SB1315

Silicon PNP Power Transistors

DESCRIPTION ?WithTO-3PMLpackage ?Lowcollectorsaturationvoltage APPLICATIONS ?Foruseinlowfrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SB1315

Silicon PNP Power Transistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) ?GoodLinearityofhFE ?ComplementtoType2SD1977 APPLICATIONS ?Audiofrequencypoweramplifierapplications ?Recommendfor45-55Waudiofrequencyamplifieroutputstageapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2SB1316

Power Transistor (−100V , −2A)

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SD2195/2SD1980.

ROHMRohm

羅姆羅姆半導體集團

2SB1316

Power Transistor (??00V,??A)

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SD2195/2SD1980.

ROHMRohm

羅姆羅姆半導體集團

2SB1316

isc Silicon PNP Power Transistor

DESCRIPTION ?DarlingtonconnectionforhighDCcurrentgain ?Builtinresistorbetweenbaseandemitter ?Builtindamperdiode ?ComplementaryNPNtypes:2SD2195/2SD1980 ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATION

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SB1316TL

Power Transistor

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SD2195/2SD1980.

ROHMRohm

羅姆羅姆半導體集團

2SB1317

Silicon PNP triple diffusion planar type(For high power amplification)

SiliconPNPtriplediffusionplanartype Forhighpoweramplification Complementaryto2SD1975 ■Features ?ExcellentcollectorcurrentICcharacteristicsofforwardcurrenttransferratiohFE ?Widesafeoperationarea ?HightransitionfrequencyfT ?OptimumfortheoutputstageofaHi-F

PanasonicPanasonic Semiconductor

松下松下電器

2SB1317

Silicon PNP Power Transistors

DESCRIPTION ?WithTO-3PLpackage ?Complementtotype2SD1975 ?Wideareaofsafeoperation ?HightransitionfrequencyfT ?OptimumfortheoutputstageofaHi-Fiaudioamplifier APPLICATIONS ?Forhighpoweramplification

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SB1317

Silicon PNP Power Transistors

DESCRIPTION ?WithTO-3PLpackage ?Complementtotype2SD1975 ?Wideareaofsafeoperation ?HightransitionfrequencyfT ?OptimumfortheoutputstageofaHi-Fiaudioamplifier APPLICATIONS ?Forhighpoweramplification

SAVANTIC

Savantic, Inc.

2SB1317

Silicon PNP Power Transistor

DESCRIPTION ?GoodLinearityofhFE ?WideAreaofSafeOperation ?HighDCCurrent-GainBandwidthProduct ?ComplementtoType2SD1975 APPLICATIONS ?Highpoweramplification ?OptimumfortheoutputstageofaHi-Fiaudioamplifier.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2SB1318

Darlington Transistor BUILT-IN DUMPER DIODE AT E-C

DESCRIPTION The2SB1318isadarlingtontransistorbuilt-indumperdiodeatE-C. ItissuitableforusetooperatefromICwithoutpredriver,suchashammerdriver. FEATURES ●HighDCCurrentGain. ●LowCollectorSaturationVoltage. ●Built-inadumperdiodeatE-C.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SB1319

Silicon PNP epitaxial planer type(For low-frequency power amplification)

SiliconPNPepitaxialplanertype Forlow-frequencypoweramplification ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●LargecollectorcurrentIC. ●Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Semiconductor

松下松下電器

2SB1315

Silicon PNP Power Transistors

SAVANTIC

Savantic, Inc.

2SB1317

Silicon PNP Power Transistors

SAVANTIC

Savantic, Inc.

2SB1316TL

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP DARL 100V 2A CPT3

Rohm Semiconductor

Rohm Semiconductor

Rohm Semiconductor

晶體管資料

  • 型號：

    2SB1314

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-PNP

  • 性質(zhì)：

    HI_BETA

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    60V

  • 最大電流允許值：

    3A

  • 最大工作頻率：

    100MHZ

  • 引腳數(shù)：

    3

  • 可代換的型號：

    2SA1469,2SB941,2SB1015,2SB1094,

  • 最大耗散功率：

    15W

  • 放大倍數(shù)：

  • 圖片代號：

    B-45

  • vtest：

    60

  • htest：

    100000000

  • atest：

    3

  • wtest：

    15

供應商型號品牌批號封裝庫存備注價格
MIT
1738+
TO-220F
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
ISAHAYA
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
MITSUBISHI/三菱
23+
TO-220F
10000
公司只做原裝正品
 詢價
MITSUBISHI/三菱
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
MIT
22+
TO-220F
6000
十年配單,只做原裝
 詢價
TOY
23+
TO
20000
正品原裝貨價格低
 詢價
MITSUBISHI
22+
TO-220F
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
MITSUBISHI
24+
TO-TO-220F
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
UTG
23+
TO-220F
8999999
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
24+
TO-3PN
10000
全新
 詢價
更多2SB131供應商 更新時間2025-1-10 18:32:00

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