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2SB1201

High-Current Switching Applications

■Features ●Lowcollector-to-emittersaturationvoltage. ●Fastswitchingspeed. ●LargecurrentcapacityandwideASO. ●Complementaryto2SD1801

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SB1201

High-Current Switching Applications

Features ·AdoptionofFBET,MBITprocesses. ·LargecurrentcapacityandwideASO. ·Lowcollector-to-emittersaturationvoltage. ·Fastswitchingspeed. ·Smallandslimpackagemakingiteasytomake2SB1201/2SD1801-usedsetssmaller. Applications ·Voltageregulators,relaydrivers,lam

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

2SB1201

isc Silicon PNP Power Transistor

DESCRIPTION ?LargecurrentcapacitanceandwideASO ?Smallandslimpackagemakingiteasytomake2SB1201/2SD1801-usedsetsmaller ?Lowcollector-to-emittersaturationvoltage ?Fastswitchingspeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceand

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SB1201

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

BipolarTransistor (–)50V,(–)2A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA Features ?AdoptionofFBET,MBITprocesses ?LargecurrentcapacitanceandwideASO ?Lowcollector-to-emittersaturationvoltage ?Fastswitchingspeed ?Smallandslimpackagemakingiteasytomake2SB1201/2SD1801-

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SB1201

isc Silicon PNP Power Transistor

DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=-0.7V(Max)@IC=-1A ·GoodLinearityofhFE ·LargeCollectorCurrentIC ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforpowerswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SB1201

isc Silicon PNP Power Transistor

DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=-0.7V(Max)@IC=-1A ·GoodLinearityofhFE ·LargeCollectorCurrentIC ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforpowerswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SB1201-251

isc Silicon PNP Power Transistor

DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=-0.7V(Max)@IC=-1A ·GoodLinearityofhFE ·LargeCollectorCurrentIC ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforpowerswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SB1201-252

isc Silicon PNP Power Transistor

DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=-0.7V(Max)@IC=-1A ·GoodLinearityofhFE ·LargeCollectorCurrentIC ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforpowerswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SB1201S-E

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

BipolarTransistor (–)50V,(–)2A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA Features ?AdoptionofFBET,MBITprocesses ?LargecurrentcapacitanceandwideASO ?Lowcollector-to-emittersaturationvoltage ?Fastswitchingspeed ?Smallandslimpackagemakingiteasytomake2SB1201/2SD1801-

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SB1201S-E

isc Silicon PNP Power Transistor

DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=-0.4V(Max)@IC=-1A ·GoodLinearityofhFE ·LargeCollectorCurrentIC ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforpowerswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SB1201S-TL-E

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

BipolarTransistor (–)50V,(–)2A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA Features ?AdoptionofFBET,MBITprocesses ?LargecurrentcapacitanceandwideASO ?Lowcollector-to-emittersaturationvoltage ?Fastswitchingspeed ?Smallandslimpackagemakingiteasytomake2SB1201/2SD1801-

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SB1201T-E

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

BipolarTransistor (–)50V,(–)2A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA Features ?AdoptionofFBET,MBITprocesses ?LargecurrentcapacitanceandwideASO ?Lowcollector-to-emittersaturationvoltage ?Fastswitchingspeed ?Smallandslimpackagemakingiteasytomake2SB1201/2SD1801-

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SB1201T-TL-E

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

BipolarTransistor (–)50V,(–)2A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA Features ?AdoptionofFBET,MBITprocesses ?LargecurrentcapacitanceandwideASO ?Lowcollector-to-emittersaturationvoltage ?Fastswitchingspeed ?Smallandslimpackagemakingiteasytomake2SB1201/2SD1801-

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SB1202

High-Current Switching Applications

High-CurrentSwitchingApplications Applications ·Voltageregulators,relaydrivers,lampdrivers,electricalequipment. Features ·AdoptionofFBET,MBITprocesses. ·LargecurrrentcapacityandwideASO. ·Lowcollector-to-emittersaturationvoltage. ·Fastswitchingspeed. ·Smalland

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

2SB1202

HIGH CURRENT SWITCHING APPLICATION

DESCRIPTION TheUTC2SB1202appliestovoltageregulators,relaydrivers,lampdrivers,andelectricalequipment. FEATURES *AdoptionofFBET,MBITprocesses *LargecurrentcapacityandwideASO *Lowcollector-to-emittersaturationvoltage *Fastswitchingspeed

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1202

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

BipolarTransistor (–)50V,(–)3A,LowVCE(sat)(PNP)NPNSingleTP/TP-FA Features ?AdoptionofFBETandMBITprocesses ?LargecurrentcapacitanceandwideASO ?Lowcollectortoemittersaturationvoltage ?Fastswitchingspeed ?Smallandslimpackagemakingiteasytomake2SB1202/2SD1

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2SB1202

isc Silicon PNP Power Transistor

DESCRIPTION ?LargecurrentcapacitanceandwideASO ?Smallandslimpackagemakingiteasytomake2SB1202/2SD1802-usedsetsmaller ?Lowcollector-to-emittersaturationvoltage ?Fastswitchingspeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performance

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SB1202

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●AdoptionofFBET,MBITProcesses ●LargeCurrentCapacityandWideASO ●LowCollector-to-EmitterSaturationVoltage ●FastSwitchingSpeed

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SB1202

PNP Transistors

■Features ●Lowcollector-to-emittersaturationvoltage. ●Fastswitchingspeed. ●LargecurrentcapacityandwideASO. ●Complementaryto2SD1802

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SB1202

Silicon PNP Power Transistor

DESCRIPTION ·LargecurrentcapacitanceandwideASO ·Lowcollector-to-emittersaturationvoltage ·Fastswitchingspeed APPLICATIONS ·Voltageregulators,relaydrivers,lampdrivers, electricalequipment

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

晶體管資料

  • 型號(hào):

    2SB1201

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    開(kāi)關(guān)管 (S)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    2A

  • 最大工作頻率:

    150MHZ

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    2SA1241,2SB928,2SB1184,

  • 最大耗散功率:

    15W

  • 放大倍數(shù):

  • 圖片代號(hào):

    A-80

  • vtest:

    60

  • htest:

    150000000

  • atest:

    2

  • wtest:

    15

詳細(xì)參數(shù)

  • 型號(hào):

    2SB12

  • 制造商:

    Distributed By MCM

  • 功能描述:

    SUB ONLY SANYO TRANSISTORSC-64TP -60V -2A 15W BCE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SANYO
24+
SOT252
20000
詢價(jià)
KEXIN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
SANYO
1822+
TO-251
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
SANYO
12+
TO-252
2500
原裝現(xiàn)貨/特價(jià)
詢價(jià)
SANYO
18+
TO-251
41200
原裝正品,現(xiàn)貨特價(jià)
詢價(jià)
SANYO/三洋
21+
TO-252
30000
只做正品原裝現(xiàn)貨
詢價(jià)
SANYO
1922+
TO252
7823
原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨
詢價(jià)
SANYO/三洋
23+
SOT252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
SANYO/三洋
2022
SOT252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
三洋
SOT-252
608900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
更多2SB12供應(yīng)商 更新時(shí)間2024-11-8 16:30:00