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2SA1235-E

PNP Transistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SA1235

SiliconPNPEpitaxial

Features Smallcollectortoemittersaturationvoltage. ExcelentlinearyDCforwardcurrentgain. Superminipackageforeasymounting.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SA1235

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE(minitype)

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1235isaminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax（@Ic=-100mA,IB=-10mA） ●Excellent

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會(huì)社

2SA1235A

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE(Superminitype)

FORLOWFREQUENCYAMPLIFYAPPLICATION FEATURE ?Superminipackageforeasymounting ?ExcellentlinearityofDCforwardgain ?Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax APPLICATION ForHybridIC,smalltypemachinelowfrequencyvoltageAmplifyappli

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會(huì)社

2SA1235A

SiliconEpitaxialPlanarTransistor

FEATURES ●Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax(@IC=-100mA,IB=-10mA). ●ExcellentlinearyDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●PNPepitaxialtypetransistordesignedforlowfrequency. ●Voltageamplifyapplication.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

2SA1235A

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2SA1235A

PNPTRANSISTOR

[DONGGUANSHIHUAYUANELECTRONCO.,LTD.] TRANSISTOR（PNP） FEATURES Powerdissipation PCM:0.2W（Tamb=25℃） Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃t

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

2SA1235A

Plastic-EncapsulateTransistors

Features ?LowCollectorCurrent ?LowCollectorPowerDissipation

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

2SA1235A

PNPepitaxialtypetransistordesignedforlowfrequency.

FEATURES ●Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax(@IC=-100mA,IB=-10mA). ●ExcellentlinearyDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●PNPepitaxialtypetransistordesignedforlowfrequency. ●Voltageamplifyapplication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

2SA1235A

PNPPlastic-EncapsulateTransistors

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

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更多2SA1235-E供應(yīng)商 更新時(shí)間2025-1-22 16:30:00

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