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2SA1213Y

Power Amplifier Applications

PowerAmplifierApplications PowerSwitchingApplications ?Lowsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Highspeedswitchingtime:tstg=1.0μs(typ.) ?Smallflatpackage ?PC=1.0to2.0W(mountedonaceramicsubstrate) ?Complementaryto2SC2873

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1213Y

GENERAL PURPOSE TRANSISTOR

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

2SA1213

TRANSISTOR竊?NP竊

FEATURES Powerdissipation PCM:0.5W（Tamb=25℃） Collectorcurrent ICM:-2A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃to+150℃

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

2SA1213

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SA1213

SiliconPlanarEpitaxialTransistor

FEATURES ●Lowsaturationvoltage ●Highspeedswitchingtime ●Smallflatpackage ●PC=1.0to2.0W(mountedonceramicsubstrate) ●Complementaryto2SC2873

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

2SA1213

PowerAmplifierApplications

PowerAmplifierApplications PowerSwitchingApplications ?Lowsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Highspeedswitchingtime:tstg=1.0μs(typ.) ?Smallflatpackage ?PC=1.0to2.0W(mountedonaceramicsubstrate) ?Complementaryto2SC2873

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1213

SiliconPlanarEpitaxialTransistor

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

2SA1213

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Lowcollectorsaturationvoltage,Highspeedswitchingtime,smallflatpackage,Complementaryto2SC2873. Applications Poweramplifierandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SA1213

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SA1213

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

2SA1213

NewJerseySemi-ConductorProducts,

NewJerseySemi-ConductorProducts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2SA1213

TRANSISTOR(PNP)

FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

2SA1213

PowerSwitchingApplications

Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A) ●HighSpeedSwitchingTime:tstg=1.0us(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC2873

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SA1213

PNPSiliconMediumPowerTransistor

*Features Lowpowerdissipation0.5W CollectorCurrent-2A *Stucture Epitaxialplanartype. PNPsilicontransistor.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SA1213

PowerAmplifierApplicationsPowerSwitchingApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1213

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2SA1213

TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications ?Lowsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Highspeedswitchingtime:tstg=1.0μs(typ.) ?Smallflatpackage ?PC=1.0to2.0W(mountedonaceramicsubstrate) ?Complementaryto2SC2873

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1213

PowerAmplifierApplicationsPowerSwitchingApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1213

PNPTransistors

Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1A) ●HighSpeedSwitchingTime:tstg=1.0us(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC2873

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

2SA1213A

Plastic-EncapsulateTransistors

FEATURES ●Complementaryto2SC2873A ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實(shí)業(yè)有限公司

詳細(xì)參數(shù)

  • 型號：

    2SA1213Y

  • 制造商：

    Panasonic Industrial Company

  • 功能描述：

    TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
TOSHIBA
24+
SOT-89
18200
新進(jìn)庫存/原裝
 詢價
ROHM
24+
TO-89
5000
只做原裝公司現(xiàn)貨
 詢價
NA
19+
59105
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
時科
22+
SOT89
30000
原裝正品現(xiàn)貨
 詢價
TOSHIBA
24+
SOT89
65300
一級代理/放心購買!
 詢價
TOSHIBA/東芝
21+
SOT-89
20000
只做正品原裝現(xiàn)貨
 詢價
SHIKUES(時科)
2112+
SOT-89(SOT-89-3)
105000
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
BYchip/百域芯
21+
SOT89
30000
百域芯原廠出品 品質(zhì)保證 可開13點(diǎn)增值稅
 詢價
RENESAS
21+
SOT-89
1556
原裝現(xiàn)貨假一賠十
 詢價
RENESAS/瑞薩
16+
SOT-89
708
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
更多2SA1213Y供應(yīng)商 更新時間2025-1-1 16:30:00

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