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2N7002VA

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002VA

N-ChannelEnhancementModeFieldEffectTransistor

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002VAC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

2N7002VC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002VC

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

2N7002VPT

DualN-ChannelEnhancementMOSFET

VOLTAGE60VoltsCURRENT0.280Ampere FEATURE *Smallsurfacemountingtype.(SOT-563) *HighdensitycelldesignforlowRDS(ON) *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Serv

CHENMKOchenmko

力勤股份有限公司

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002W

SmallSignalMOSFET

115mAMPS,60VOLTS,RDS(on)=7.5SmallSignalMOSFET N–ChannelSOT–323

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002W

SmallSignalMOSFET60V,340mA,Single,N??hannel,SC??0

Features ?ESDProtected ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?2VPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowON-Resistance ?LowInputCapacitance ?LowGateThresholdVoltage ?FastSwitchingSpeed ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?Low-OnRe

DIODES

Diodes Incorporated

2N7002W

N-ChannelMOSFET

Features: *LowOn-Resistance:7.5? *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThresholdVoltage:1.5V(TYE) *FastSwitchingSpeed:7ns

WEITRON

Weitron Technology

2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002W

60VN-ChannelEnhancementModeMOSFET

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=5? ?RDS(ON),VGS@4.5V,IDS@75mA=7.5? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:Relays,Displays,Lamps,Solen

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002W

300mAmps,60VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N7002W

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2N7002W

Plastic-EncapsulateMosfets

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage MechanicalData ?Case:SOT-323,MoldedPlastic ?Terminals:SolderableperMIL-STD-202,Method208 ?TerminalConnectio

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

2N7002W

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.34A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Diodes
22+
SOT563
9000
原廠渠道,現(xiàn)貨配單
 詢價
Diodes
21+
SOT563
13880
公司只售原裝,支持實單
 詢價
DIODES
23+
20000
全新、原裝、現(xiàn)貨
 詢價
Diodes
24+
SOT-563
7500
詢價
DIODES
21+
SOT363
6000
原裝現(xiàn)貨假一賠十
 詢價
DIODES/美臺
23+
SOT463
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
原裝DIODES
SOT563
608900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
DIODES
SOT-563
16000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
DIODES/美臺
22+
SOT563
30000
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價
Diodes Incorporated
2022+
SOT-563
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
更多2N7002V/BKN供應(yīng)商 更新時間2024-11-17 10:30:00

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