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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
2N7002KV	文件：425.76 Kbytes Page：3 Pages	N-Channel Enhancement Mode Field Effect Transistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotectedupto2KV ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponrequest	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
2N7002KV	文件：1.1607 Mbytes Page：4 Pages	Plastic-Encapsulate MOSFETS FEATURE ?HighdensitycelldesignforLowRDS(on) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?ESDprotected APPLICATION ?LoadSwitchforPortableDevices ?DC/DCConverter	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE
2N7002KW	文件：170.76 Kbytes Page：5 Pages	60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers	PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司	PANJIT
2N7002KW	文件：533.04 Kbytes Page：4 Pages	N-ChSmallSignalMOSFETwithESDProtection FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2N7002KW	文件：624.98 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)	YANGJIEYangzhou yangjie electronic co., ltd 揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司	YANGJIE
2N7002KW	文件：291.95 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
2N7002KW	文件：1.01269 Mbytes Page：8 Pages	N-Channel60-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:2Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective20	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
2N7002KW	文件：386.34 Kbytes Page：4 Pages	N-ChannelEnhancementMOSFET Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM	YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司	YFWDIODE
2N7002KW	文件：113.46 Kbytes Page：8 Pages	N-ChannelSMDMOSFETESDProtection Features ?RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A ?RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A ?ESDproduction2kV(Humanbodymode) ?Advancedtrenchprocesstechnology. ?Highdensitycelldesignforultralowon-resistance. ?Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr	FORMOSAFormosa MS 美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司	FORMOSA
2N7002KW	文件：203.34 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEMOSFET DESCRIPTION TheUTC2N7002KWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES LowReverseTransferCapacitance ESDProtected *FastSwitchingCap	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC
2N7002KW	文件：1.12801 Mbytes Page：5 Pages	N-ChannelMOSFET N-ChannelMOSFET FEATURE ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司	JIANGSU
2N7002KW	文件：369.91 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponreques	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
2N7002KW	文件：533.04 Kbytes Page：4 Pages	N-ChSmallSignalMOSFETwithESDProtection FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver	SECELECTRONICS SEC Electronics Inc.	SECELECTRONICS
2N7002KW	文件：1.83479 Mbytes Page：5 Pages	N-ChannelEnhancementModeMOSFET Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy	TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司	TECHPUBLIC
2N7002KW	文件：263.42 Kbytes Page：7 Pages	60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R	PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司	PANJIT
2N7002KWA	文件：650.04 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor Features ?HighdensitycelldesignforLowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?Highsaturationcurrentcapability ?LowInput/OutputLeakage ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?Halogenfreeavailableuponreques	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
2N7002KW-AU	文件：629.87 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET–ESDProtected Features ?RDS(ON),VGS@10V,ID@500mA	PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司	PANJIT
2N7002KW-CAR	文件：422.73 Kbytes Page：4 Pages	N-ChannelMOSFET FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcap	GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司	GWSEMI
2N7002KWQ	文件：504.36 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)	YANGJIEYangzhou yangjie electronic co., ltd 揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司	YANGJIE
2N7002KX	文件：575.09 Kbytes Page：6 Pages	N-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance (RDS(ON))andyetmaintainsuperiorswitchingperformance,makingit idealforhighefficiencypowermanagementapplications. Applications ?MotorControl ?PowerManagementFunctions ?Backlighting Features	DIODES Diodes Incorporated	DIODES

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市力拓輝電子有限公司	2N7002KV	麗正國際	21+		100	全新原裝鄙視假貨15118075546	詢價(jià)
深圳市高捷芯城科技有限公司	2N7002KV-TP	MCC(美微科)	23+	SOT563	7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!	詢價(jià)
現(xiàn)代芯城（深圳）科技有限公司	2N7002KV-TP		24+	N/A	52000	一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市宏捷佳電子科技有限公司	2N7002KV-TP	Micro Commercial Co	24+	SOT-563 SOT-666	9350	獨(dú)立分銷商公司只做原裝誠心經(jīng)營免費(fèi)試樣正品保證	詢價(jià)
深圳市弘揚(yáng)芯城科技有限公司	2N7002K-VB	VBsemi(微碧)	23+	SOT23	5000	誠信服務(wù)，絕對原裝原盤	詢價(jià)
深圳市達(dá)恩科技有限公司	2N7002KW	ONSemiconductor	18+	NA	3000	進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190	詢價(jià)
深圳市華斯頓科技有限公司	2N7002KW	長電	22+23+	SOT-323	24014	絕對原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
深圳誠思涵科技有限公司	2N7002KW	PANJIT	18+	SOT	85600	保證進(jìn)口原裝可開17%增值稅發(fā)票	詢價(jià)
深圳市錦喆鴻電子有限公司	2N7002KW	FSC	21+	SOT323	12588	原裝正品,自己庫存假一罰十	詢價(jià)
深圳市卓越微芯電子有限公司	2N7002KW	原廠	2020+		16	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)

更多2N7002KV供應(yīng)商更新時(shí)間2024-11-18 10:00:00

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