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零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
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2N7002HS | 60 V, dual N-channel Trench MOSFET 1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnolog | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | |
WedeclarethatthematerialofproductcompliancewithRoHSrequirementsandHalogenFree. FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●ESDProtected:1000V | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
60V,N-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ? | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60VN-ChannelEnhancementModeMOSFET-ESDProtected FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3? ?RDS(ON),VGS@4.5V,IDS@200mA=4? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers | PANJITPan Jit International Inc. 強(qiáng)茂強(qiáng)茂股份有限公司 | PANJIT | ||
N-Channel60-V(D-S)MOSFET DESCRIPTION Theattachedspicemodeldescribesthetypicalelectricalcharacteristicsofthen-channelverticalDMOS.Thesubcircuitmodelisextractedandoptimizedoverthe?55to125°Ctemperaturerangesunderthepulsed0-Vto10-Vgatedrive.Thesaturatedoutputimpedanceisbestfitatthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed | DIODES Diodes Incorporated | DIODES | ||
NCEN-ChannelEnhancementModePowerMOSFET GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?PbFree/RoHSCompliant ?ESDHBM=2000V(Typical:3000V)asperJESD22A114 andESDCDM=2000VasperJESD2 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DirectLogic-LevelInterface:TTL/CMOS GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON) | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
N-ChannelMOSFET Features ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighdensitycelldesignforlowRDS(ON) ?Voltagecontrolledsmallsignalswitch ?Ruggedandreliable ?ESDProtectedupto2KV(HBM) ?Marking:72K ?Halogenfreeavailableuponrequestbyaddingsuff | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
N-ChannelEnhancementModeFieldEffectTransistor | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelEnhanceentModeFieldEffectTransistor Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SmallSignalMOSFET60V,380mA,Single,N??hannel,SOT??3 Features ?ESDProtected ?LowRDS(on) ?SurfaceMountPackage ?2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSCompliant Applications | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
N-ChannelEnhancementModePowerMOSFET | WEITRON Weitron Technology | WEITRON | ||
300mAmps,60VoltsN-CHANNELENHANCEMENTMODEMOSFET DESCRIPTION TheUTC2N7002KusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ?FEATURES *LowReverseTransferCapacitance(CRSS=typical3.0pF) *ESDProt | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-Channel60-V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
NChannelMOSFET INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V. ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
N-Channel60-V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-ChSmallSignalMOSFETwithESDProtection FEATURES ?RDS(ON),VGS@10V,IDS@500mA=3Ω ?RDS(ON),VGS@4.5V,IDS@200mA=4Ω ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?VeryLowLeakageCurrentInOffCondition ?SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NEXPERIA |
22+ |
SMD |
18000 |
詢價(jià) | |||
Nexperia(安世) |
23+ |
SOT23(TO236) |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
NEXPERIA |
700 |
詢價(jià) | |||||
NEXPERIA |
24+ |
NA |
10250 |
只做原裝現(xiàn)貨13691986278微信 |
詢價(jià) | ||
24+ |
N/A |
73000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
NEXPERIA |
24+ |
con |
700 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index |
詢價(jià) | ||
NEXPERIA |
24+ |
con |
700 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index |
詢價(jià) | ||
NEXPERIA |
2338+ |
578 |
原裝正品,支持實(shí)單 |
詢價(jià) | |||
Nexperia(安世) |
23+ |
SOT-23(TO-236) |
7087 |
Nexperia安世原裝現(xiàn)貨庫存,原廠技術(shù)支持! |
詢價(jià) | ||
Nexperia USA Inc. |
24+ |
6-TSSOP SC-88 SOT-363 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) |
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