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2N7002_

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

Diodes Incorporated

2N7002-01

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage

DIODES

Diodes Incorporated

2N7002-215

60 V, 300 mA N-channel Trench MOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOSFETtechnology Featuresandbenefits ●Suitableforlogiclevelgatedrivesources ●Veryfastswitching ●Surface-mountedpackage ●TrenchMOSFETtechnology Applications ●Log

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

2N7002A

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, makingitidealforhighefficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?N-Cha

DIODES

Diodes Incorporated

2N7002A

Marking：WB；Package：SOT-23；N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontroolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity.

KECKEC CORPORATION

KEC株式會(huì)社

2N7002A

Marking：7002A；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

2N7002A-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, makingitidealforhighefficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?N-Cha

DIODES

Diodes Incorporated

2N7002-AE3-R

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControlledSmallSigna

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002AK

Marking：NJ；Package：SOT-23；N-Channel Enhancement MOSFET

HighSpeedSwitchingApplications ESDprotectedgate LowON-resistance RDS(on)=2.8Ω(typ.)(@VGS=10V) RDS(on)=3.1Ω(typ.)(@VGS=5V) RDS(on)=3.2Ω(typ.)(@VGS=4.5V)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

2N7002AKQB-Q

Marking：QK；Package：DFN1110D-3；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1110D-3 (SOT8015)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?ExtendedtemperaturerangeTj=175

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    2N7002E

  • 制造商：

    ANBON SEMICONDUCTOR (INT'L) LIMITED

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個(gè)

  • 包裝：

    管件

  • 描述：

    N-CHANNEL SMD MOSFET ESD PROTECT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
12+
SOT-232
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
PHILIPS
2724
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
Yeashin
23+
SOT23
12000
全新原裝優(yōu)勢(shì)
 詢價(jià)
NXP
23+
SOT23
12300
詢價(jià)
PANJIT強(qiáng)
13+
9425
原裝分銷
 詢價(jià)
PHILIPS
24+
TO-251
2147
原裝現(xiàn)貨假一罰十
 詢價(jià)
DIODES
2020+
SOT-323
12783
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
CHENMKO
24+
SOT-363SOT-323-6
9200
新進(jìn)庫(kù)存/原裝
 詢價(jià)
NXP
16+
NA
8800
誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
更多2N7002_供應(yīng)商 更新時(shí)間2025-2-28 9:10:00

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