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2ED2108S06F集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書PDF中文資料
廠商型號(hào) |
2ED2108S06F |
參數(shù)屬性 | 2ED2108S06F 封裝/外殼為8-SOIC(0.154",3.90mm 寬);包裝為卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶;類別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC HALF BRIDGE GATE DRIVER 650V |
功能描述 | 650 V half bridge gate driver with integrated bootstrap diode |
文件大小 |
1.67112 Mbytes |
頁(yè)面數(shù)量 |
26 頁(yè) |
生產(chǎn)廠商 | Infineon Technologies AG |
企業(yè)簡(jiǎn)稱 |
Infineon【英飛凌】 |
中文名稱 | 英飛凌科技股份公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-12-27 18:26:00 |
2ED2108S06F規(guī)格書詳情
2ED2108S06F屬于集成電路(IC)的柵極驅(qū)動(dòng)器。由英飛凌科技股份公司制造生產(chǎn)的2ED2108S06F柵極驅(qū)動(dòng)器柵極驅(qū)動(dòng)器電源管理集成電路 (PMIC) 可用于提供隔離、放大、參考位移、自舉或其他必要功能,這些功能可將來自電源轉(zhuǎn)換應(yīng)用中控制設(shè)備的信號(hào)連接到電源被控制通過的半導(dǎo)體設(shè)備(通常為 FET 或 IGBT)。任何特定設(shè)備提供的確切功能各不相同,但與它適合驅(qū)動(dòng)的半導(dǎo)體配置相關(guān)。
Description
The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.
Features
? Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
? Negative VS transient immunity of 100 V
? Floating channel designed for bootstrap operation
? Operating voltages (VS node) upto + 650 V
? Maximum bootstrap voltage (VB node) of + 675 V
? Integrated ultra-fast, low resistance bootstrap diode
? Logic operational up to –11 V on VS Pin
? Negative voltage tolerance on inputs of –5 V
? Independent under voltage lockout for both channels
? Schmitt trigger inputs with hysteresis
? 3.3 V, 5 V and 15 V input logic compatible
? Maximum supply voltage of 25 V
? Dual package options of DSO-8 and DSO-14
? High and low voltage pins separated for maximum creepage and
?? clearance (2ED21094S06J version)
? Separate logic and power ground with the 2ED21094S06J version
? Internal 540 ns dead time and programmable up to 5 us with
?? external resistor (2ED21094S06J only)
? Shutdown input turns off both channels
? RoHS compliant
產(chǎn)品屬性
更多- 產(chǎn)品編號(hào):
2ED2108S06FXUMA1
- 制造商:
Infineon Technologies
- 類別:
集成電路(IC) > 柵極驅(qū)動(dòng)器
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 驅(qū)動(dòng)配置:
半橋
- 通道類型:
同步
- 柵極類型:
IGBT,N 溝道 MOSFET
- 電壓 - 供電:
10V ~ 20V
- 邏輯電壓?- VIL,VIH:
1.1V,1.7V
- 電流 - 峰值輸出(灌入,拉出):
CB,cCSAus,CE,CQC,TUV
- 輸入類型:
非反相
- 上升/下降時(shí)間(典型值):
100ns,35ns
- 工作溫度:
-40°C ~ 125°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
8-SOIC(0.154",3.90mm 寬)
- 供應(yīng)商器件封裝:
PG-DSO-8-53
- 描述:
IC HALF BRIDGE GATE DRIVER 650V
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
SOP8 |
6000 |
誠(chéng)信服務(wù),絕對(duì)原裝原盤 |
詢價(jià) | ||
Infineon |
23+ |
PG-DSO-8 |
15500 |
英飛凌優(yōu)勢(shì)渠道全系列在售 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
DSO-8 |
25630 |
原裝正品 |
詢價(jià) | ||
Infineon(英飛凌) |
2021+ |
PG-DSO-8-53 |
499 |
詢價(jià) | |||
Infineon/英飛凌 |
23+ |
DSO-8 |
25000 |
原裝正品,假一賠十! |
詢價(jià) | ||
Infineon/英飛凌 |
2022+ |
DSO-8 |
48000 |
只做原裝,原裝,假一罰十 |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
DSO-8 |
6820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
Infineon |
2023 |
7500 |
公司原裝現(xiàn)貨/支持實(shí)單 |
詢價(jià) | |||
Infineon(英飛凌) |
1921+ |
PG-DSO-8-53 |
3575 |
向鴻倉(cāng)庫(kù)現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝! |
詢價(jià) | ||
Infineon/英飛凌 |
24+ |
DSO-8 |
7188 |
秉承只做原裝 終端我們可以提供技術(shù)支持 |
詢價(jià) |