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LH28F800

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800BG

8M-bit(512kBx16)SmartVoltageFlashMemory

DESCRIPTION TheLH28F800SG-LflashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-LcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizeslongerbattery

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800BGB-L

8M-bit(512kBx16)SmartVoltageFlashMemories

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800BGH-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800BGH-L

8M-bit(512kBx16)SmartVoltageFlashMemories

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800BGH-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800BG-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800BG-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800BG-L/BGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800BG-L/BGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800BG-L

8M-bit(512kBx16)SmartVoltageFlashMemory

DESCRIPTION TheLH28F800SG-LflashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-LcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizeslongerbattery

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800SG

8M-bit(512kBx16)SmartVoltageFlashMemory

DESCRIPTION SHARP’sLH28F800SGFlashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.LH28F800SGcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizelongerbatterylife

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800SG

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800SGH-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800SG-L

8M-bit(512kBx16)SmartVoltageFlashMemory

DESCRIPTION SHARP’sLH28F800SGFlashmemorywithSmartVoltagetechnologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.LH28F800SGcanoperateatVCC=2.7VandVPP=2.7V.Itslowvoltageoperationcapabilityrealizelongerbatterylife

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800SG-L

8M-bit(512kBx16)SmartVoltageFlashMemories

DESCRIPTION TheLH28F800SG-L/SGH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.TheLH28F800SG-L/SGH-LcanoperateatVCC=2.7VandVPP=2.7V.Theirlowvoltageoperationcapabilityrealizes

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH28F800SU

8M(512K?16,1M?8)FlashMemory

INTRODUCTION Sharp’sLH28F800SU8MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,5Vsinglevoltageoperationandveryhighread/writeperformance,theLH28F800S

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

TMS28F800AEB

AUTO-SELECTBOOT-BLOCKFLASHMEMORIES

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TMS28F800AET

AUTO-SELECTBOOT-BLOCKFLASHMEMORIES

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TMS28F800ALB

AUTO-SELECTBOOT-BLOCKFLASHMEMORIES

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TMS28F800ALT

AUTO-SELECTBOOT-BLOCKFLASHMEMORIES

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TMS28F800ASB

AUTO-SELECTBOOT-BLOCKFLASHMEMORIES

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

詳細(xì)參數(shù)

  • 型號:

    28F800CV-T/B

  • 功能描述:

    8-MBIT(512K X 16. 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

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2406+
BGA
1850
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CTPCOIL
170
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PomonaElectronics
132
全新原裝 貨期兩周
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Pomona Electronics
2022+
128
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Pomona
2010+
N/A
100
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POMONA
20+
連接器
963
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CTPCOIL
23+
589610
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24+
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46000
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2020+
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80000
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SMD
2021+
SMD
100500
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更多28F800CV-T/B供應(yīng)商 更新時(shí)間2024-11-17 16:11:00