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IXFR26N50

HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface)

(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR26N50Q

HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface)

(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFT26N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT26N50Q

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification

IXYS

IXYS Corporation

IXFV26N50P

AvalancheRatedFastInstrinsicDiode

VDSS=500V ID25=26A RDS(on)≤230m? trr≤200ns AvalancheRatedFastInstrinsicDiode Features ●Internationalstandardpackages ●Fastintrinsicdiode ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomou

IXYS

IXYS Corporation

IXFV26N50PS

AvalancheRatedFastInstrinsicDiode

VDSS=500V ID25=26A RDS(on)≤230m? trr≤200ns AvalancheRatedFastInstrinsicDiode Features ●Internationalstandardpackages ●Fastintrinsicdiode ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomou

IXYS

IXYS Corporation

IXTC26N50P

PolarHVPowerMOSFET

ElectricallyIsolatedTab,N-ChannelEnhancementMode,AvalancheRated Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( Applications DC-DCconverters

IXYS

IXYS Corporation

IXTC26N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ26N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ26N50P

PolarHVTMPowerMOSFET

IXYS

IXYS Corporation

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U
22+
TO-3P
6000
十年配單,只做原裝
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U
22+
TO-3P
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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UTC/友順
23+
TO-3P
409999
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
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UTC/友順
2023+
TO-3P
50000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
UTC
24+/25+
TO3P
2980
20年芯片代理現(xiàn)貨分銷正品保證
 詢價(jià)
Portescap
2010+
N/A
73
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INFINEON
23+
3P
8000
只做原裝現(xiàn)貨
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INFINEON
23+
3P
7000
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ST/意法
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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ST/意法
23+
TO-220
20000
原裝正品 歡迎咨詢
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更多26N50供應(yīng)商 更新時(shí)間2025-4-1 14:00:00

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