25AA080DT-I/MNY集成電路（IC）的存儲器規(guī)格書PDF中文資料

25AA080DT-I/MNY屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的25AA080DT-I/MNY存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The Microchip Technology Inc. 25AA080C/D, 25LC080C/D (25XX080C/D*) are 8 Kbit Serial Electrically Erasable PROMs. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input.

Features

? Max. Clock 10 MHz

? Low-Power CMOS Technology:

- Max. write current: 5 mA at 5.5V

- Read current: 5 mA at 5.5V, 10 MHz

- Standby current: 5 μA at 5.5V

? 1024 x 8-bit Organization

? 16 Byte Page (‘C’ version devices)

? 32 Byte Page (‘D’ version devices)

? Self-Timed Erase and Write Cycles (5 ms max.)

? Block Write Protection:

- Protect none, 1/4, 1/2 or all of array

? Built-In Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

- Write-protect pin

? Sequential Read

? High Reliability:

- Endurance: > 1M erase/write cycles

- Data retention: > 200 years

- ESD protection: > 4000V

? Pb-Free and RoHS Compliant

? Temperature Ranges Supported:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C