24AA256UIDT-I/ST集成電路（IC）的存儲器規(guī)格書PDF中文資料

24AA256UIDT-I/ST屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的24AA256UIDT-I/ST存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The Microchip Technology Inc. 24AA256UID is a 32K x 8 (256 Kbit) Serial Electrically Erasable PROM with pre-programmed EUI-48 and EUI-64 node addresses and a 32-bit Unique ID, capable of operation across a broad voltage range (1.7V to 5.5V). This device also has a page write capability of up to 64 bytes of data. This device is available in the standard 8-pin plastic DIP, SOIC and TSSOP packages.

Features

? Pre-Programmed 32-Bit Serial Number:

- Unique across all UID-family EEPROMs

- Scalable to 48-bit, 64-bit, 128-bit, 256-bit,

and other lengths

? Pre-Programmed Globally Unique, 48-bit or 64-bit

Node Address:

- Compatible with EUI-48? and EUI-64?

? Codes Stored in Permanently Write-Protected

Upper 1/8th of EEPROM Array

? Single Supply with Operation Down to 1.7V

? Low-Power CMOS Technology:

- Active current 400 μA, typical

- Standby current 100 nA, typical

? 2-Wire Serial Interface, I2C Compatible

? Cascadable up to Eight Devices

? Schmitt Trigger Inputs for Noise Suppression

? Output Slope Control to Eliminate Ground Bounce

? 100 kHz and 400 kHz Clock Compatibility

? Page Write Time 5 ms Maximum

? Self-Timed Erase/Write Cycle

? 64-Byte Page Write Buffer

? ESD Protection >4000V

? More than One Million Erase/Write Cycles

? Data Retention >200 years

? Packages Include 8-lead PDIP, SOIC and TSSOP

? RoHS Compliant

? Temperature Ranges:

- Industrial (I): -40°C to +85°C