24AA044T-E/ST集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

24AA044T-E/ST屬于集成電路（IC）的存儲(chǔ)器。由微芯科技股份有限公司制造生產(chǎn)的24AA044T-E/ST存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description:

The Microchip Technology Inc. 24AA044 is a 4 Kbit Serial Electrically Erasable PROM with a voltage range of 1.7V to 5.5V. The device is organized as two blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-current design permits operation with standby and active currents of only 1 μA and 400 μA, respectively. The device has a page write capability for up to 16 bytes of data. Functional address lines allow the connection of up to four 24AA044 devices on the same bus for up to 16K bits of contiguous EEPROM memory. The device is available in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm), TSSOP, 2x3 UDFN and MSOP packages.

Features:

? Single Supply with Operation from 1.7V to 5.5V

? Low-Power CMOS Technology:

- Read current 400 μA, max

- Standby current 1 μA, max at 85°C

? 2-Wire Serial Interface, I2C? Compatible

? Cascadable up to Four Devices

? Schmitt Trigger Inputs for Noise Suppression

? Output Slope Control to Eliminate Ground Bounce

? 1 MHz, 400 kHz, and 100 kHz Clock Compatibility

? Page Write Time 5 ms Maximum

? Self-timed Erase/Write Cycle

? 16-Byte Page Write Buffer

? Hardware Write-Protect

? ESD Protection >4,000V

? More than 1 Million Erase/Write Cycles

? Data Retention >200 Years

? Factory Programming Available

? Packages include 8-lead PDIP, SOIC, TSSOP, UDFN and MSOP

? RoHS Compliant

? Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C