23K256-E/ST集成電路（IC）的存儲器規(guī)格書PDF中文資料

23K256-E/ST屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的23K256-E/ST存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The Microchip Technology Inc. 23X256 are 256-Kbit

Serial SRAM devices. The memory is accessed via a

simple Serial Peripheral Interface (SPI) compatible

serial bus. The bus signals required are a clock input

(SCK) plus separate data in (SI) and data out (SO)

lines. Access to the device is controlled through a Chip

Select (CS) input.

Communication to the device can be paused via the

hold pin (HOLD). While the device is paused,

transitions on its inputs will be ignored, with the

exception of Chip Select, allowing the host to service

higher priority interrupts.

Features

? Maximum Clock 20 MHz

? Low-Power CMOS Technology:

- Read Current: 3 mA at 1 MHz

- Standby Current: 4 μA maximum at +85°C

? 32,768 x 8-bit Organization

? 32-Byte Page

? HOLD Pin

? Flexible Operating Modes:

- Byte read and write

- Page mode (32-Byte Page)

- Sequential mode

? Sequential Read/Write

? High Reliability

? Temperature Ranges Supported:

? Pb-Free and RoHS Compliant, Halogen Free

? Automotive AEC-Q100 Qualified

- Industrial (I):-40C to + 85C

- Extended (E):-40C to + 125C