ESDTU5V0A1

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

IP4223CZ6

Marking：21；Package：SOT457；Dual USB 2.0 integrated ESD protection

1.1Generaldescription TheIP4223CZ6isdesignedtoprotectI/Olinessensitivetocapacitiveload,suchas USB2.0,ethernet,DigitalVideoInterface(DVI)andsoon,fromdamagedueto ElectroStaticDischarge(ESD).Itincorporatesfourpairsofultralowcapacitancerail-to-rail ESDprotec

NJW4104U3-33B-T1

Marking：21；Package：SOT-89-3；45V Io=200mA Ultra low Quiescent current LDO

■FEATURES ●LowQuiescentCurrent5.5μAtyp.(Aversion) 5.0μAtyp.(Bversion) ●OperatingVoltage4.0Vto40V ●OperatingTemperatureTa=-40Cto125°C ●OutputVoltageAccuracyVO1.0(Ta=25C) VO2.0(Ta=-40Cto125°C) ●OutputCurrentIO(min.)=200mA ●ON/OFFControlAver.only ●Corres

PDTA123ET

Marking：21；Package：SOT23；PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PDTA123ET

Marking：21；Package：SOT23；PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

PEMH13

Marking：21；Package：SOT666；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

1.Generaldescription NPN/NPNdoubleResistor-EquippedTransistor(RET)inanultrasmallandflatleadSOT666 Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PEMD13 PNP/PNPcomplement:PEMB13 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasr

PESD5V0F1BL

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

PESD5V0X1BL

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

PESDMC2FD5VB

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

PESDR0521P1

Marking：21；Package：DFN1006-2；Ultra small package: 1.0x0.6x0.5mm

DescriptionThePESDR0521P1isabi-directionalTVSdiode,utilizingleadingmonolithicsilicontechnologytoprovidefastresponsetimeandlowESDclampingvoltage,makingthisdeviceanidealsolutionforprotectingvoltagesensitivehigh-speeddatalines.ThePESDR0521P1hasanultra-lowcapacitance