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1N60P

SMALL SIGNAL SCHOTTKY DIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者：深圳市福田區(qū)吉富昌電子商行

1N60P

SMALL SIGNAL SCHOTTKY DIODES

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

1N60P

SILICON SCHOTTKY BARRIER DIODE

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

1N60PG-T92-B

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60PG-T92-K

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60PG-T92-R

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60PL-T92-B

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60PL-T92-K

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60PL-T92-R

1.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC1N60PisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristic.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsofpowe

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60PW

Schottky Barrier Diode

FEATURES ?Highreliability ?Lowforwardvoltageandreversecurrent APPLICATIONS ?Forelectroniccalculator,etc. ?Lowcurrentrectificationandhighspeedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    1N60P

  • 制造商：

    FORMOSA

  • 制造商全稱：

    Formosa MS

  • 功能描述：

    Schottky Barrier Diode

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST/意法
2022+
DIP
30000
進(jìn)口現(xiàn)貨 原盒原標(biāo)假一罰十
 詢價(jià)
JF
24+
DO-35
5323
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
 詢價(jià)
FORMOSA
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
LL34
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
JF
24+
DO-35
6540
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
ST/意法
22+
DO-35
20000
深圳原裝現(xiàn)貨正品有單價(jià)格可談
 詢價(jià)
ST/先科
23+
DO-35
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
SZXYL/MIC
22+
DO-35
500000
原廠渠道/可含稅特價(jià)出/誠信經(jīng)營(yíng)
 詢價(jià)
ST
20+
SMD-1206
20
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ST/意法
22+
DO-35
17870
原裝正品
 詢價(jià)
更多1N60P供應(yīng)商 更新時(shí)間2025-4-22 10:08:00

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