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1N5822

SCHOTTKYBARRIERRECTIFIERS

PANJITPan Jit International Inc.

強茂強茂股份有限公司

1N5822

SchottkyBarrierRectifiers

Diotec

Diotec Semiconductor

1N5822

Schottkybarrierrectifiersdiodes

SemikronSemikron International

賽米控丹佛斯

1N5822

SCHOTTKYBARRIERRECTIFIERS

REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-3.0Amperes FEATURES ●Metal-Semiconductorjunctionwithgardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvlotage,highfrequencyi

HY

HY ELECTRONIC CORP.

1N5822

CURRENT3.0AmperesVOLTAGE20to40Volts

Features ·PlasticPackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ·Metalsiliconjunction,majoritycarrierconduction ·Guardringforovervoltageprotection ·Lowpowerloss,highefficiency ·Highcurrentcapability,Lowforwardvoltagedrop ·Highsurgecapability

DAESAN

Daesan Electronics Corp.

1N5822

SchottkyBarrierRectifier

FEATURES ?Guardringforovervoltageprotection ?Verysmallconductionlosses ?Extremelyfastswitching ?Lowforwardvoltagedrop ?Highforwardsurgecapability ?Highfrequencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?ComplianttoRoHSdirective2002/95/ECandin ?

VishayVishay Siliconix

威世科技威世科技半導體

1N5822

3.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40Volts CURRENT3.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

UNIOHMUniohm

臺灣厚聲

1N5822

SCHOTTKYBARRIERRECTIFIER

RECTRON

Rectron Semiconductor

1N5822

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:20---40V CURRENT:3.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfreewheeling,andpolarityprotectionapplicat

BILINGalaxy Semi-Conductor Holdings Limited

世紀微電子常州銀河世紀微電子股份有限公司

1N5822

3.0ASCHOTTKYBARRIERDIODE

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5822

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequencyinverters,f

PANJITPan Jit International Inc.

強茂強茂股份有限公司

1N5822

SCHOTTKYBARRIERRECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Metalsliiconjunction,majoritycarrietconduction ?Guardringforovercoltageprotection ?Lowpowerloss,highefficiency ?Highcurrentcapability,Lowforwardvoltagedrop ?Highsurgecapability

CHENYIShanghai Lunsure Electronic Tech

商朗電子上海商朗電子科技有限公司

1N5822

3AMPSCHOTTKYBARRIERRECTIFIERS

?1N5822AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/620 ?3AMPSCHOTTKYBARRIERRECTIFIERS ?HERMETICALLYSEALED ?METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

1N5822

3.0AmpereSchottkyBarrierRectifiers

Features ?3.0ampereoperationatTA=95°C withnothermalrunaway. ?Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

1N5822

SCHOTTKYBARRIERRECTIFIER

VOLTAGE:20TO40VCURRENT:3.0A FEATURES ?Epitaxialconstructionforchip ?Highcurrentcapability ?Lowforwardvoltagedrop ?Lowpowerloss,highefficiency ?Highsurgecapability ?Hightemperaturesolderingguaranteed: 250°C/10sec/0.375(9.5mm)leadlength at5lbstension

SSE

Shanghai Sunrise Electronics

1N5822

3.0AMP.SCHOTTKYBARRIERRECTIFIERS

JGDJinan Gude Electronic Device

濟南固锝電子濟南固锝電子器件有限公司

1N5822

SCHOTTKYBARRIERRECTIFIER

RECTRON

Rectron Semiconductor

1N5822

3.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5822

3AMPERESCHOTTKYBARRIERRECTIFIER

TRSYS

Transys Electronics

1N5822

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow–voltage,

Motorola

Motorola, Inc

詳細參數(shù)

  • 型號：

    1N5822USJANS

  • 制造商：

    Microsemi Corporation

供應商型號品牌批號封裝庫存備注價格
MSC
5
公司優(yōu)勢庫存 熱賣中!!!
 詢價
MICROSEMI
2018+
SMD
1680
MICROSEMI專營品牌進口原裝現(xiàn)貨假一賠十
 詢價
MICROCHIP
23+
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
MICROCHIP
23+
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
MSC
三年內
1983
納立只做原裝正品13590203865
 詢價
CJ/長電
22+
SOT523
101499
原裝正品現(xiàn)貨,可開13點稅
 詢價
CJ
20+
SOT523
31930
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
TOSHIBA/東芝
23+
DO-214
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TOSHIBA/東芝
2022
DO-214
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
杰翔達
23+
17ROHS
6000
BOM配單--可開發(fā)票專業(yè)手機料也回收
 詢價
更多1N5822USJANS供應商 更新時間2024-11-6 16:20:00

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