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1N5822-LFR

3ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●EXTREMELYLOWVF ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LOWPOWERLOSS/HIGHEFFICIENCY ●LEADFREE

FRONTIER

Frontier Electronics

1N5822M

SchottkyBarrierRectifiers

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

1N5822PT

VOLTAGERANGE20-40VoltsCURRENT3.0Amperes

CHENMKOchenmko

力勤股份有限公司

1N5822RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RL

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RLG

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822S

SCHOTTKYBARRIERRECTIFIERDIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC discrete Semiconductors

1N5822-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-TB

3.0ASCHOTTKYBARRIERDIODE

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5822-TB

3.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5822-TP

3AmpSchottkyBarrierRectifier20-40Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N5822U

Aerospace40VpowerSchottkyrectifier

Description ThispowerSchottkyrectifierisdesignedandpackagedtocomplywiththeESCC5000specificationforaerospaceproducts.ItishousedinasurfacemounthermeticallysealedLCC2Bpackagewhosefootprintis100compatiblewithindustrystandardsolutionsinD5B. The1N5822Uissuitabl

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

1N5822US

3AmpSQ-MELFSchottkyBarrierRectifiers

DESCRIPTION Thisseriesof3ampSchottkyrectifiersarecompactintheirsquareMELFpackagingforhighdensitymounting.The1N5822USand1N6864USaremilitaryqualifiedforhigh-reliabilityapplications. FEATURES ?JEDECregisteredsurfacemountequivalentsof1N5820–1N5822and1N6864nu

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5822US

3AMPSCHOTTKYBARRIERRECTIFIERS

?1N5822USAVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/620 ?3AMPSCHOTTKYBARRIERRECTIFIERS ?HERMETICALLYSEALED ?LEADLESSPACKAGEFORSURFACEMOUNT ?METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5822US

3AMPSCHOTTKYBARRIERRECTIFIERS

?1N5822USAVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/620 ?3AMPSCHOTTKYBARRIERRECTIFIERS ?HERMETICALLYSEALED ?LEADLESSPACKAGEFORSURFACEMOUNT ?METALLURGICALLYBONDED,DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

JAN1N5822

3AMPSCHOTTKYBARRIERRECTIFIERS

?1N5822AVAILABLEINJAN,JANTX,JANTXVANDJANS PERMIL-PRF-19500/620 ?3AMPSCHOTTKYBARRIERRECTIFIERS ?HERMETICALLYSEALED ?METALLURGICALLYBONDED MAXIMUMRATINGS OperatingTemperature:-65°Cto+125°C StorageTemperature:-65°Cto+150°C AverageRectifiedForwardCurre

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANS1N5822

3AMPSCHOTTKYBARRIERRECTIFIERS

?1N5822AVAILABLEINJAN,JANTX,JANTXVANDJANS PERMIL-PRF-19500/620 ?3AMPSCHOTTKYBARRIERRECTIFIERS ?HERMETICALLYSEALED ?METALLURGICALLYBONDED MAXIMUMRATINGS OperatingTemperature:-65°Cto+125°C StorageTemperature:-65°Cto+150°C AverageRectifiedForwardCurre

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX1N5822

3AMPSCHOTTKYBARRIERRECTIFIERS

?1N5822AVAILABLEINJAN,JANTX,JANTXVANDJANS PERMIL-PRF-19500/620 ?3AMPSCHOTTKYBARRIERRECTIFIERS ?HERMETICALLYSEALED ?METALLURGICALLYBONDED MAXIMUMRATINGS OperatingTemperature:-65°Cto+125°C StorageTemperature:-65°Cto+150°C AverageRectifiedForwardCurre

MicrosemiMicrosemi Corporation

美高森美美高森美公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON/安森美
23+
DO-201AD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ON/安森美
2022
DO-201AD
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
MICROCHIP
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
MICROCHIP
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
MSCI
24+
SMD
100
“芯達(dá)集團(tuán)”專營(yíng)軍工百分之百原裝進(jìn)口
 詢價(jià)
MSC
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
MSCI
23+
NA
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
 詢價(jià)
TOSHIBA
21+
SOD123F
3000
原裝現(xiàn)貨假一賠十
 詢價(jià)
TOSHIBA
22+
SOD123F
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢價(jià)
TOSHIBA
15+
SOD123F
1620
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
更多1N5822IC供應(yīng)商 更新時(shí)間2025-1-3 11:01:00

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