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1N5822.TR

包裝：散裝 封裝/外殼：DO-201AD，軸向 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：3A, 40V SCHOTTKY TR

SEMTECH

Semtech Corporation

1N5822-AP

3AmpSchottkyBarrierRectifier20-40Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N5822-B

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-B

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-BP

3AmpSchottkyBarrierRectifier20-40Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LowForwardVoltageDropandHighCurrentCapability ?HighSurgeCurrentCapability ?EpoxymeetsUL94V-0

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N5822G

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822G

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822-G

SchottkyBarrierRectifier

ForwardCurrent:3.0AReverseVoltage:20to40V RoHSDevice Features -Fastswitching. -Lowforwardvoltage,highcurrentcapability. -Lowpowerloss,highefficiency. -Highcurrentsurgecapability. -Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)leadlengtha

COMCHIPComchip Technology

典琦典琦科技股份有限公司

1N5822H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequenc

PANJITPan Jit International Inc.

強茂股份有限公司

1N5822H

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40Volts ForwardCurrent-3.0Amperes FEATURES *Halogen-freetype *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency,Highsurgecapability *Highcurrentcapability,lowfo

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

1N5822-LFR

3ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●EXTREMELYLOWVF ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LOWPOWERLOSS/HIGHEFFICIENCY ●LEADFREE

FRONTIER

Frontier Electronics

1N5822M

SchottkyBarrierRectifiers

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

1N5822PT

VOLTAGERANGE20-40VoltsCURRENT3.0Amperes

CHENMKOchenmko

力勤股份有限公司

1N5822RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RL

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RLG

AxialLeadRectifiers

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5822S

SCHOTTKYBARRIERRECTIFIERDIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC discrete Semiconductors

1N5822-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

1N5822-T

3.0ASCHOTTKYBARRIERRECTIFIERS

DIODES

Diodes Incorporated

產(chǎn)品屬性

  • 產(chǎn)品編號：

    1N5822.TR

  • 制造商：

    Semtech Corporation

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝：

    散裝

  • 二極管類型：

    肖特基，反極性

  • 電流 - 平均整流 (Io)：

    3A

  • 速度：

    快速恢復(fù) =< 500ns，> 200mA（Io）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    DO-201AD，軸向

  • 供應(yīng)商器件封裝：

    DO-201AD

  • 工作溫度 - 結(jié)：

    -65°C ~ 125°C

  • 描述：

    3A, 40V SCHOTTKY TR

供應(yīng)商型號品牌批號封裝庫存備注價格
Semtech Corporation
24+
DO-201AD
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
GSC
1535+
473
詢價
GS
22+
NA
30000
原裝現(xiàn)貨假一罰十
 詢價
GSC
23+
473
全新原裝，歡迎來電咨詢
 詢價
ON
21+
SMD
1987
原裝現(xiàn)貨假一賠十
 詢價
ON
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ON
22+
SMD
25000
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十
 詢價
ON
14+
SMD
1987
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ON
23+
SMD
1987
正規(guī)渠道,只有原裝!
 詢價
星海
22+23+
SMB
24356
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
更多1N5822.TR供應(yīng)商 更新時間2024-12-26 17:36:00

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