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首頁 >1N5802JAN>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
1N5802US	文件：659.61 Kbytes Page：4 Pages	RectifierDiodeSeries	MA-COM M/A-COM Technology Solutions, Inc.	MA-COM
1N5802US	文件：318.28 Kbytes Page：2 Pages	MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5802US	文件：132.46 Kbytes Page：2 Pages	SURFACEMOUNTVOIDLESSHERMETICALLY-SEALEDULTRAFASTRECOVERYGLASSRECTIFIERS	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5802US	文件：45.27 Kbytes Page：3 Pages	UltrafastRecoveryRectifier	SENSITRON SENSITRON SEMICONDUCTOR	SENSITRON
1N5802US	文件：45.34 Kbytes Page：3 Pages	UltrafastRecoveryRectifier UltrafastRecoveryRectifier ?Hermetic,non-cavityglasspackage ?Metallurgicallybonded ?OperatingandStorageTemperature:-65°Cto+175°C	SENSITRON SENSITRON SEMICONDUCTOR	SENSITRON
1N5802US	文件：110.72 Kbytes Page：2 Pages	SuperfastRecoveryDiodesSurfaceMount(US) Features ?Verylowreverserecoverytime ?Hermeticallysealednon-cavityconstruction ?Soft,non-snap,offrecoverycharacteristics ?Verylowforwardvoltagedrop VR50-150V IF1N5802USto1N5806US=2.5A trr1N5802USto1N5806US=25nS IR1N5802USto1N5806US=1μA	SEMTECH Semtech Corporation	SEMTECH
1N5802US	文件：112.74 Kbytes Page：2 Pages	SURFACEMOUNTVOIDLESSHERMETICALLY-SEALEDULTRAFASTRECOVERYGLASSRECTIFIERS DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N5802	文件：133.12 Kbytes Page：3 Pages	MILITARYAPPROVED,HIGHEFFICIENCY,2.5AMPAND6.0AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N5802	文件：53.36 Kbytes Page：2 Pages	ULTRAFASTMILITARYRECTIFIERS	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N5802	文件：318.28 Kbytes Page：2 Pages	MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N5802US	文件：318.28 Kbytes Page：2 Pages	MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANHCE1N5802	文件：46.75 Kbytes Page：3 Pages	2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS FEATURES: ?ChipOutlineDimensions:41x41mils ?ChipThickness:8to12mils ?AnodeMetallization:Aluminum ?MetallizationThickness:50,000?Nominal ?BondingArea:23x23milsMin. ?BackMetallization:Gold ?JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign ?Back	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANHCF1N5802	文件：46.75 Kbytes Page：3 Pages	2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS FEATURES: ?ChipOutlineDimensions:41x41mils ?ChipThickness:8to12mils ?AnodeMetallization:Aluminum ?MetallizationThickness:50,000?Nominal ?BondingArea:23x23milsMin. ?BackMetallization:Gold ?JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign ?Back	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANKCE1N5802	文件：46.75 Kbytes Page：3 Pages	2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS FEATURES: ?ChipOutlineDimensions:41x41mils ?ChipThickness:8to12mils ?AnodeMetallization:Aluminum ?MetallizationThickness:50,000?Nominal ?BondingArea:23x23milsMin. ?BackMetallization:Gold ?JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign ?Back	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANKCF1N5802	文件：46.75 Kbytes Page：3 Pages	2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS FEATURES: ?ChipOutlineDimensions:41x41mils ?ChipThickness:8to12mils ?AnodeMetallization:Aluminum ?MetallizationThickness:50,000?Nominal ?BondingArea:23x23milsMin. ?BackMetallization:Gold ?JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign ?Back	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANS1N5802	文件：318.28 Kbytes Page：2 Pages	MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANS1N5802	文件：53.36 Kbytes Page：2 Pages	ULTRAFASTMILITARYRECTIFIERS	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANS1N5802US	文件：318.28 Kbytes Page：2 Pages	MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N5802	文件：53.36 Kbytes Page：2 Pages	ULTRAFASTMILITARYRECTIFIERS	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N5802	文件：318.28 Kbytes Page：2 Pages	MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi

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詳細參數(shù)

型號：
1N5802JAN
制造商：
Semtech Corporation
功能描述：
Diode Switching 50V 3.3A 2-Pin Case G-111

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市鴻昌盛電子科技有限公司	1N5802JAN	MSC	2007/2008		2146	公司現(xiàn)貨	詢價
深圳市利加科技有限公司	1N5802JANTX	MICROSEMI	16+	NA	8800	原裝現(xiàn)貨,貨真價優(yōu)	詢價
深圳市維爾達電子有限公司	1N5802JANTX	MICROSEMI	2023+		80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
標準國際(香港)有限公司	1N5802JANTX	SEMT			396	公司優(yōu)勢庫存熱賣中!!!	詢價
深圳市創(chuàng)新跡電子有限公司	1N5802JANTX/TR	MICROCHIP	23+		7300	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安富世紀電子有限公司	1N5802JANTX/TR	MICROCHIP	23+		7300	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市微納爾電子實業(yè)有限公司	1N5802URS	Microchip	21+		15000	只做原裝	詢價
深圳市川藍電子科技有限公司	1N5802URS	microchipdirect	23+		15422	原包裝原標現(xiàn)貨,假一罰十,	詢價
現(xiàn)代芯城（深圳）科技有限公司	1N5802URS		24+	N/A	47000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
深圳市宏捷佳電子科技有限公司	1N5802URS	Microchip Technology	24+	A SQ-MELF	9350	獨立分銷商公司只做原裝誠心經(jīng)營免費試樣正品保證	詢價

更多1N5802JAN供應(yīng)商更新時間2024-12-22 16:00:00

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