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1N5364

5WSILICONPLANARZENERDIODES

FEATURES ?Lowleakage,lowzenerimpedanceatlowcurrent ?Maximumpowerdissipationof5Wisideallysuitedforstabilizedpowersupply,etc. ?Hightemperaturesolderingguaranteed:260°C/10secondsatterminals ?Standardzenervoltagetoleranceavailableis±20.Suffix“A” in

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集團(tuán)濟(jì)南晶恒電子有限責(zé)任公司

1N5364A

SILICONZENERDIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

EIC

EIC discrete Semiconductors

1N5364A

5-WATTZENERREGULATORDIODES3.3-200VOLTS

5-WATTZENERREGULATORDIODES3.3-200VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N5364A

SILICONZENERDIODES

EIC

EIC discrete Semiconductors

1N5364A

SILICONZENERDIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

EIC

EIC discrete Semiconductors

1N5364B

Zenersilicondiodes

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1N5364B

5WSILICONZENERDIODES

description 5WsiliconZenerdiodes. ■VOLTAGERANGE:3.3VTO200V ■HERMETICALLYSEALEDPLASTICCASE ■HIGHSURGECAPABILITY(upto180W@8.3ms)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

1N5364B

Silicon-Power-Z-Diodes(non-planartechnology)

?Maximumpowerdissipation5W ?NominalZ-voltage8.7…200V ?Plasticcase~DO-201 ?Weightapprox.1g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedinammopackseepage1

Diotec

Diotec Semiconductor

1N5364B

SILICON5WATTZENERDIODES

DESCRIPTION The1N5333-5388BJEDECregisteredseriesofaxial-leaded5.0wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithdifferenttolerancesasidentifiedbyspecificsuffixletteronthepartnumber.TheseplasticencapsulatedZenershavemoistureclassificatio

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5364B

5WZENERDIODE

Features ?VoltageRange8.2V-200V ?GlassPassivatedJunction ?5WSteadyState ?HighSurgeCapability ?±5VoltageToleranceonNominalVZisStandard ?100Tested

DIODES

Diodes Incorporated

1N5364B

5WattSurmetic40SiliconZenerDiodes

5WattSurmetic40SiliconZenerDiodes ???acompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcapabilitiesofsilicon-oxide-passivatedjunctions.Allthisisinanaxial-lead,transfer-moldedplasticpackagethatoffersprote

bocaBoca Semiconductor Corporation

博卡博卡半導(dǎo)體公司

1N5364B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

VOLTAGE-11TO200VoltsPower-5.0Watts FEATURES Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance TypicalIDlessthan1Aabove13V Hightemperaturesoldering:260/10secondsatterminals PlasticpackagehasUnderwritersLaboratory Flammability

TRSYS

Transys Electronics

1N5364B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE(VOLTAGE-11to200VoltsPower-5.0Watts)

FEATURES ?Forsurfacemountedapplicationsinordertooptimizeboardspace. ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIDlessthan1.0μAabove13V ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

1N5364B

5WATTZENERREGULATORDIODES3.3-200VOLTS

5-WattSurmetic40SiliconZenerDiodes

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

1N5364B

DIODE

5-WATTZENERREGULATORDIODES3.3-200VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N5364B

SILICONZENERDIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

1N5364B

5WSILICONZENERDIODE

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

DIOTECH

Diotech Company.

1N5364B

SILICONZENERDIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

1N5364B

5WSILICONZENERDIODES

Descriptions StandardcaseisDO-15,D2Acaseisavailableuponrequest.Forexample:1N5335B(D2A)meansthecaseinD2A. Features ?Highpeakreversepowerdissipation ?Highreliability ?Lowleakagecurrent

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

1N5364B

ZENERDIODES

POWERDISSIPATION:5.0W FEATURES ◇Siliconplanarpowerzenerdiodes ◇Foruseinstabilizingandclippingcurcuitswithhighpowerrating. ◇Standardzenervoltagetoleranceis±10.AddsuffixBfor±5tolerance.otherzenervoltageandtolerancesareavailableuponrequest.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    1N5364BRLG-CUT TAPE

  • 制造商：

    ON

  • 功能描述：

    1N5364B Series 5 W 1 A 33 V Axial Zener Voltage Regulator Diode - CASE-017AA

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ON/安森美
23+
CASE17-02
50000
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ON/安森美
2022
CASE17-02
80000
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ON/安森美
NA
275000
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MCC
24+
DO-15DO-204ACAxi
7500
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Micro
1942+
N/A
3037
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MICRO
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ON/安森美
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Microchip
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8600
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MICROCHIP
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更多1N5364BRLG-CUT TAPE供應(yīng)商 更新時(shí)間2024-12-29 11:00:00

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