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1N5350B

5WSILICONZENERDIODES

description 5WsiliconZenerdiodes. ■VOLTAGERANGE:3.3VTO200V ■HERMETICALLYSEALEDPLASTICCASE ■HIGHSURGECAPABILITY(upto180W@8.3ms)

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

1N5350B

SILICON5WATTZENERDIODES

DESCRIPTION The1N5333-5388BJEDECregisteredseriesofaxial-leaded5.0wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithdifferenttolerancesasidentifiedbyspecificsuffixletteronthepartnumber.TheseplasticencapsulatedZenershavemoistureclassificatio

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5350B

Silicon-Power-Z-Diodes(non-planartechnology)

?Maximumpowerdissipation5W ?NominalZ-voltage8.7…200V ?Plasticcase~DO-201 ?Weightapprox.1g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedinammopackseepage1

Diotec

Diotec Semiconductor

1N5350B

5WattSurmetic40SiliconZenerDiodes

5WattSurmetic40SiliconZenerDiodes ???acompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcapabilitiesofsilicon-oxide-passivatedjunctions.Allthisisinanaxial-lead,transfer-moldedplasticpackagethatoffersprote

bocaBoca Semiconductor Corporation

博卡博卡半導體公司

1N5350B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

VOLTAGE-11TO200VoltsPower-5.0Watts FEATURES Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance TypicalIDlessthan1Aabove13V Hightemperaturesoldering:260/10secondsatterminals PlasticpackagehasUnderwritersLaboratory Flammability

TRSYS

Transys Electronics

1N5350B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE(VOLTAGE-11to200VoltsPower-5.0Watts)

FEATURES ?Forsurfacemountedapplicationsinordertooptimizeboardspace. ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIDlessthan1.0μAabove13V ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?

PANJITPan Jit International Inc.

強茂強茂股份有限公司

1N5350B

5WATTZENERREGULATORDIODES3.3-200VOLTS

5-WattSurmetic40SiliconZenerDiodes

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

1N5350B

5WSILICONZENERDIODES

Descriptions StandardcaseisDO-15,D2Acaseisavailableuponrequest.Forexample:1N5335B(D2A)meansthecaseinD2A. Features ?Highpeakreversepowerdissipation ?Highreliability ?Lowleakagecurrent

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導體先之科半導體科技（東莞）有限公司

1N5350B

SILICONZENERDIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

1N5350B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES

FEATURES ?Forsurfacemountedapplicationsinordertooptimizeboardspace. ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Lowinductance ?TypicalIDlessthan1.0μAabove13V ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?

PANJITPan Jit International Inc.

強茂強茂股份有限公司

詳細參數(shù)

  • 型號：

    1N5350TR

  • 制造商：

    MICROSEMI

  • 制造商全稱：

    Microsemi Corporation

  • 功能描述：

    Silicon 5 Watt Zener Diodes

供應商型號品牌批號封裝庫存備注價格
ON/安森美
23+
CASE17-02
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ON/安森美
2022
CASE17-02
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
VISHAYMAS
22+23+
1702
24666
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
ON/安森美
23+
CASE17-02
41200
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
ON/安森美
23+
NA/
1200
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
Microsemi
1942+
N/A
908
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
MICROSEMI
1809+
T-18
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Microchip
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
EIC
23+
NA
39960
只做進口原裝,終端工廠免費送樣
 詢價
EIC
25+
NA
860000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
更多1N5350TR供應商 更新時間2025-3-25 10:59:00

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