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1N4003G

GLASSPASSIVATEDJUNCTIONRECTIFIERVOLTAGE:50TO1000VCURRENT:1.0A

VOLTAGE:50TO1000VCURRENT:1.0A FEATURE Moldedcasefeatureforautoinsertion Highcurrentcapability Lowleakagecurrent Highsurgecapability Hightemperaturesolderingguaranteed 250°C/10sec/0.375leadlengthat5lbstension GlassPassivatedchip

GULFSEMIGulf Semiconductor

海灣電子海灣電子（山東）有限公司

1N4003G

VOLTAGE50V~1000V1.0AMPGlassPassivatedSiliconRectifiers

FEATURES ?RoHSCompliantProduct ?LowForwardVoltageDrop ?HighCurrentCapability ?HighReliability ?HighSurgeCurrentCapability

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

1N4003G

GLASSPASSIVATEDJUNCTIONSILICONRECTIFIERS

PRV:50-1000Volts Io:1.0Ampere FEATURES: *Glasspassivatedchip *Highcurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop

SYNSEMI

SynSemi，Inc.

1N4003G

1.0AGLASSPASSIVATEDRECTIFIER

DIODES

Diodes Incorporated

1N4003G

1.0A,GeneralPurposePlasticRectifiers

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

1N4003G

GENERALPURPOSEPLASTICRECTIFIER

ReverseVoltage-50to1000Volts ForwardCurrent-1.0Ampere FEATURES ?GPRC(GlassPassivatedRectifierChip)inside ?Glasspassivatedcavity-freejunction ?CapableofmeetingenvironmentalstandardsofMIL-S-19500 ?1.0AmpereoperationatTa=75°Cand55°Cwithnothermalrunaway ?Typi

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集團(tuán)濟(jì)南晶恒電子有限責(zé)任公司

1N4003G

GLASSPASSIVATEDSILICONRECTIFIER

ReverseVoltage-50to1000Volts ForwardCurrent-1.0Ampere FEATURES ◆TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ◆Constructionutilizesvoid-free moldedplastictechnique ◆Lowreverseleakage ◆Highforwardsurgecurrentcapability ◆

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1N4003G

GENERALPURPOSESILICONRECTIFIER

DIOTECH

Diotech Company.

1N4003G

1.0AMPGlassPassivatedRectifiers

FEATURES -Glasspassivatedchipjunction -Highcurrentcapability,LowVF -Highreliability -Highsurgecurrentcapability -Lowpowerloss,highefficiency -Halogen-freeaccordingtoIEC61249-2-21definition -ComplianttoRoHSDirective2011/65/EUand inaccordancetoWEEE2002/

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

1N4003G

HIGHEFFICIENCYRECTIFIER

FEATURES ?Glasspassivatedchipjunction ?Lowforwardvoltagedrop ?Lowreverseleakage ?Highforwardsurgecurrentcapability ?Hightemperaturesolderingguaranteed 260℃/10secods,0.375”(9.5mm)leadlength at5lbs(2.3kg)tension

PFSShenzhen Ping Sheng Electronics Co., Ltd.

平盛電子深圳市平盛電子有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    1N4003.TR

  • 制造商：

    Texas Instruments

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GSC
1535+
4913
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GSC
23+
4913
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Vishay General Semiconductor -
24+
DO-204AL(DO-41)
9350
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NA
19486
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DIODES/美臺(tái)
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NA
12730
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DIODESI
01+
30
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DIODESI
22+23+
7202
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DIODESI
01+
6000
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DIODES
1809+
DO-41
16750
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更多1N4003.TR供應(yīng)商 更新時(shí)間2025-3-26 16:00:00

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