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M8050HQLT1G

Marking：1HC；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

M8050HQLT3G

Marking：1HC；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

M8050HRLT1G

Marking：1HE；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

M8050HRLT3G

Marking：1HE；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

M8050HSLT1G

Marking：1HG；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

M8050HSLT3G

Marking：1HG；Package：SOT-23；General Purpose Transistors NPN Silicon

FEATURE ●Highcurrentcapacityincompactpackage. IC=1.5A. ●Epitaxialplanartype. ●NPNcomplement:L8050H ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

PSMN1R0-40YSH

Marking：1H0S40J；Package：SOT1023；N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

1.Generaldescription 290Amp,standardlevelgatedriveN-channelenhancementmodeMOSFETin175°CLFPAK56E packageusingadvancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesigned andqualifiedforhighperformancepowerswitchingapplications. 2.Featuresandbenefits ?

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PSMN1R5-25MLH

Marking：1H525L；Package：SOT1210；N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

1.Generaldescription LogiclevelgatedriveN-channelenhancementmodeMOSFETinLFPAK33package. NextPowerS3technologydeliverslowRDSon,lowIDSSleakageandhighefficiency.Ratedto150A andoptimizedwithlowgateresistance(RG)forfast-switchingapplications. 2.Featuresandbenef

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PSMN1R5-50YLH

Marking：1H550L；Package：SOT1023；N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E

1.Generaldescription 200Ampcontinuouscurrent,logiclevelgatedrive,N-channelenhancementmodeMOSFET inLFPAK56Epackage.PartoftheASFETsforBatteryIsolationandDCMotorcontrolfamily andusingNexperia’sunique“SchottkyPlus”technologydelivershighefficiencyandlowspiking

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PSMN1R6-30MLH

Marking：1H630L；Package：SOT1210；N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

1.Generaldescription LogiclevelgatedriveN-channelenhancementmodeMOSFETinLFPAK33package. NextPowerS3technologydeliverslowRDSon,lowIDSSleakageandhighefficiency.Ratedto160A andoptimizedforDCloadswitchandhot-swapapplications. 2.Featuresandbenefits ?Optimized

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    1H

  • 制造商：

    LG Corporation

  • 功能描述：

    FANGA-071, 072D F

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
2022+
63
全新原裝 貨期兩周
 詢價(jià)
ON/安森美
23+
SOT23-3
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢價(jià)
N/A
24+/25+
750
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
HARRIS
13+
CFP-20
1380
原裝分銷
 詢價(jià)
MOTOROLA
23+
原廠封裝
9526
詢價(jià)
ELANTEC
24+
17
詢價(jià)
FSC
23+
ZIP-5
5000
原裝正品,假一罰十
 詢價(jià)
UNICOM
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
 詢價(jià)
ANAREN
2020+
HYBRID
120
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
TRWCI
23+
CFP-24
8890
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢
 詢價(jià)
更多1H供應(yīng)商 更新時(shí)間2025-7-17 9:50:00

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