PSMN1R7-25YLC

Marking：1C725L；Package：SOT669；N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1Generaldescription LogiclevelenhancementmodeN-channelMOSFETinLFPAKpackage.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits HighreliabilityPowerSO8package, qualifiedto175°C Low

PSMN1R9-25YLC

Marking：1C925L；Package：SOT669；N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1Generaldescription LogiclevelenhancementmodeN-channelMOSFETinLFPAKpackage.Thisproductis designedandqualifiedforuseinawiderangeofindustrial,communicationsanddomestic equipment. 1.2Featuresandbenefits HighreliabilityPowerSO8package, qualifiedto175°C Low

TLV74310PDBVR

Marking：1CCT；Package：SOT-23；TLV743P 300-mA, Low-Dropout Regulator

1Features 1?InputVoltageRange:1.4Vto5.5V ?StableOperationWith1-μFCeramicOutput Capacitor ?FoldbackOvercurrentProtection ?Packages: –SOT-23(5) –X2SON(4) ?VeryLowDropout:125mVat300mA(3.3VOUT) ?Accuracy:1%(Typical),1.4%(Maximum) ?LowIQ:34μA

TLV74333PDBVR

Marking：1CBT；Package：SOT-23；TLV743P 300-mA, Low-Dropout Regulator

1Features 1?InputVoltageRange:1.4Vto5.5V ?StableOperationWith1-μFCeramicOutput Capacitor ?FoldbackOvercurrentProtection ?Packages: –SOT-23(5) –X2SON(4) ?VeryLowDropout:125mVat300mA(3.3VOUT) ?Accuracy:1%(Typical),1.4%(Maximum) ?LowIQ:34μA

TLV9061IDCKR

Marking：1CA；Package：SC70；TLV906xS 10MHz, RRIO, CMOS Operational Amplifiers for Cost-Sensitive Systems

1Features ?Rail-to-railinputandoutput ?Lowinputoffsetvoltage:±0.3mV ?Unity-gainbandwidth:10MHz ?Lowbroadbandnoise:10nV/√Hz ?Lowinputbiascurrent:0.5pA ?Lowquiescentcurrent:538μA ?Unity-gainstable ?InternalRFIandEMIfilter ?Operationalatsupplyvoltagesas

TLV9061IDCKR

Marking：1CA；Package：SC70；TLV906xS 10MHz, RRIO, CMOS Operational Amplifiers for Cost-Sensitive Systems

1Features ?Rail-to-railinputandoutput ?Lowinputoffsetvoltage:±0.3mV ?Unity-gainbandwidth:10MHz ?Lowbroadbandnoise:10nV/√Hz ?Lowinputbiascurrent:0.5pA ?Lowquiescentcurrent:538μA ?Unity-gainstable ?InternalRFIandEMIfilter ?Operationalatsupplyvoltagesas

TMAG5111C2AQDBVRQ1

Marking：1C2Z；Package：SOT-23；TMAG511x-Q1 2D, Dual-Channel, High-Sensitivity, Hall-Effect Latch

1Features ?AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:–40°Cto125°C ambientoperatingtemperaturerange –DeviceHBMESDclassificationLevelH3A –DeviceCDMESDclassificationLevelC6 ?FunctionalSafety-Capable –Documentationavailabletoaidfuncti

TMAG5111C4AQDBVRQ1

Marking：1C4Z；Package：SOT-23；TMAG511x-Q1 2D, Dual-Channel, High-Sensitivity, Hall-Effect Latch

1Features ?AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:–40°Cto125°C ambientoperatingtemperaturerange –DeviceHBMESDclassificationLevelH3A –DeviceCDMESDclassificationLevelC6 ?FunctionalSafety-Capable –Documentationavailabletoaidfuncti

TMAG5231C1DQDBZR

Marking：1C1D；Package：SOT-23；TMAG5231 Low-Power, Hall Effect Switch

1Features ?Lowpowerconsumption: –10-Hzversions:1.3μAat3V –20-Hzversions:2μAat3V –216-Hzversions:16μAat3V ?1.65-Vto5.5-VoperatingVCCrange ?Magneticthresholdoption(typicalBOP): –1.8mTwith0.6-mThysteresis –2.85mTwith1.35-mThysteresis –3mTwith

TMAG5231C1DQDBZR

Marking：1C1D；Package：SOT-23；TMAG5231 Low-Power, Hall Effect Switch

1Features ?Lowpowerconsumption: –10-Hzversions:1.3μAat3V –20-Hzversions:2μAat3V –216-Hzversions:16μAat3V ?1.65-Vto5.5-VoperatingVCCrange ?Magneticthresholdoption(typicalBOP): –1.8mTwith0.6-mThysteresis –2.85mTwith1.35-mThysteresis –3mTwith