19NM60中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

Description

This device is an N-channel Power MOSFET

developed using the second generation of

MDmesh? technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

Features

? Designed for automotive applications and

AEC-Q101 qualified

? 100 avalanche tested

? Low input capacitance and gate charge

? Low gate input resistance

Applications

? Switching applications