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18N60M2

N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

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STB18N60M2

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V APPLICATIONS ·Switching ·LLCconverters,resonantconverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2

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STB18N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

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STF18N60M2

Lowgateinputresistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencycon

STMICROELECTRONICSSTMicroelectronics

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STF18N60M2

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STFH18N60M2

Extremelylowgatecharge

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STFU18N60M2

N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

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STI18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL18N60M2

N-channel600V,0.278廓typ.,9AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh?M2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencyco

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+/24+
TO-247
29880
原裝MOS管(場(chǎng)效應(yīng)管).
 詢價(jià)
SANYO/三洋
23+
TO-220F
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
ST
23+
TO-247TO-3P
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST/意法
23+
DFN-85x6
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
ST/意法
23+
DFN-85x6
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
UTC/友順
23+
TO-3P
10000
公司只做原裝正品
 詢價(jià)
UTC/友順
TO-3P
22+
6000
十年配單,只做原裝
 詢價(jià)
UTC/友順
22+
TO-3P
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
UTC
24+
TO-3P
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
SILAN/士蘭微
22+
TO-220F-3L;TO-220-3L;TO-3P
150000
掛的就有,常備現(xiàn)貨
 詢價(jià)
更多18N60M2供應(yīng)商 更新時(shí)間2025-2-26 10:18:00

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