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12105J2R7BS中文資料恩智浦?jǐn)?shù)據(jù)手冊(cè)PDF規(guī)格書

12105J2R7BS
廠商型號(hào)

12105J2R7BS

功能描述

Heterojunction Bipolar Transistor Technology (InGaP HBT)

文件大小

640.44 Kbytes

頁(yè)面數(shù)量

17 頁(yè)

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡(jiǎn)稱

nxp恩智浦

中文名稱

恩智浦半導(dǎo)體公司官網(wǎng)

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更新時(shí)間

2025-1-23 23:00:00

12105J2R7BS規(guī)格書詳情

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Broadband High Linearity Amplifier

The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.

Features

? Frequency: 40-3600 MHz

? P1dB: 24 dBm @ 900 MHz

? Small-Signal Gain: 20 dB @ 900 MHz

? Third Order Output Intercept Point: 40.5 dBm @ 900 MHz

? Single Voltage Supply

? Internally Matched to 50 Ohms

? Cost-effective SOT-89 Surface Mount Plastic Package

? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

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