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12105J0R4BBS中文資料恩智浦?jǐn)?shù)據(jù)手冊PDF規(guī)格書

12105J0R4BBS
廠商型號

12105J0R4BBS

功能描述

Heterostructure Field Effect Transistor (GaAs HFET)

文件大小

468.79 Kbytes

頁面數(shù)量

15

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡稱

nxp恩智浦

中文名稱

恩智浦半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

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更新時間

2025-1-23 23:00:00

12105J0R4BBS規(guī)格書詳情

250--4000 MHz, 12 dB 22.5 dBm GaAs HFET GPA

The MMH3111NT1 is a general purpose amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 250 to 4000 MHz such as cellular, PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

Features

● Frequency: 250 to 4000 MHz

● P1dB: 22.5 dBm @ 900 MHz

● Small--Signal Gain: 12 dB @ 900 MHz

● Third Order Output Intercept Point: 44 dBm @ 900 MHz

● Single 5 V Supply

● Internally Prematched to 50 Ohms

● Internally Biased

● Cost--effective SOT--89 Surface Mount Plastic Package

● In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

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