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100B470JT500XT

Airfast RF Power LDMOS Transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

100B470JT500XT1K

包裝:托盤 封裝/外殼:1111(2828 公制) 類別:電容器 陶瓷電容器 描述:CAP CER 47PF 500V P90 1111

ATC

American Technical Ceramics Corp

100B470JT500XT1K

包裝:托盤 封裝/外殼:1111(2828 公制) 類別:電容器 陶瓷電容器 描述:CAP CER 47PF 500V P90 1111

ATC

American Technical Ceramics Corp

ATC100B470JT500XT

RFPowerLDMOSTransistor

N?ChannelEnhancement?ModeLateralMOSFET This2WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof728to960MHz. Features ?Greaternegativegate?sourcevoltagerangeforimprovedClassC operation ?On?chipmatching(50ohmin

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

ATC100B470JT500XT

RFPowerFieldEffectTransistorN--ChannelEnhancement--ModeLateralMOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. ?TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

ATC100B470JT500XT

RFPowerFieldEffectTransistor

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

ATC100B470JT500XT

RFPowerLDMOSTransistorN-ChannelEnhancement-ModeLateralMOSFET

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

ATC100B470JT500XT

RFPowerLDMOSTransistorN-ChannelEnhancement-ModeLateralMOSFET

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

ATC100B470JT500XT

RFLDMOSWidebandIntegratedPowerAmplifier

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

ATC100B470JT500XT

RFLDMOSWidebandIntegratedPowerAmplifiers

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

ATC100B470JT500XT

RFPowerFieldEffectTransistor

865--960MHz,28WAVG.,28VSINGLEW--CDMALATERALN--CHANNELRFPOWERMOSFET DesignedforCDMAbasestationapplicationswithfrequenciesfrom865to960MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats. ?TypicalSingle--CarrierW--CDMAPerfor

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

ATC100B470JT500XT

RFPowerFieldEffectTransistor

880MHz,10WAVG.,28VSINGLEN-CDMALATERALN-CHANNELBROADBANDRFPOWERMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge-signal,common-sourceamplifierapplica

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

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ATC
2019+
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6992
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ATC
24+
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4000
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ATC
21+
1210
450
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AMERICAN
20+
電容器
2926
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ATC
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NA
6878
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更多100B470JT500XT供應(yīng)商 更新時(shí)間2024-12-26 16:04:00