100A3R3BW150XC中文資料RFMD數(shù)據(jù)手冊PDF規(guī)格書

Product Description

The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1000 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

Features

■ Advanced GaN HEMT Technology

■ Output Power of 15W

■ Advanced Heat-Sink Technology

■ 50MHz to 1000MHz Instantaneous Bandwidth

■ Input Internally Matched to 50?

■ 28V Operation Typical Performance

■ Output Power 41.5dBm

■ Gain 17dB

■ Power Added Efficiency 60

■ -40°C to 85°C Operating Temperature

■ Large Signal Models Available

Applications

■ Class AB Operation for Public Mobile Radio

■ Power Amplifier Stage for Commercial Wireless Infrastructure

■ General Purpose Tx Amplification

■ Test Instrumentation

■ Civilian and Military Radar