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SMBJ58CA

Marking:100CA;Package:DO-214AA;Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 600Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0.01% Fast

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

SMF100A

Marking:100A;Package:SOD-123FL;Surface Mount Transient Voltage Suppressor

Features ●Forsurfacemountedapplications ●Low-profilepackage ●Idealforautomatedplacement ●AvailableinUnidirectionalandBidirectional ●200Wpeakpulsepowercapabilitywitha10/1000μs waveform ●Lowincrementalsurgeresistance,excellentclamping capability ●Veryfastre

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽電子三陽電子有限公司

SMF100CA

Marking:100CA;Package:SOD-123FL;Surface Mount Transient Voltage Suppressor

Features ●Forsurfacemountedapplications ●Low-profilepackage ●Idealforautomatedplacement ●AvailableinUnidirectionalandBidirectional ●200Wpeakpulsepowercapabilitywitha10/1000μs waveform ●Lowincrementalsurgeresistance,excellentclamping capability ●Veryfastre

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽電子三陽電子有限公司

STB100N10F7

Marking:100N10F7;Package:D2PAK;N-channel 100 V, 6.8 mΩ typ., 80 A STripFET? F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET?F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD100N10F7

Marking:100N10F7;Package:DPAK;N-channel 100 V, 6.8 mΩ typ., 80 A STripFET? F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET?F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD100N10LF7AG

Marking:100N10LF7;Package:DPAK;Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET? F7 Power MOSFET in a DPAK package

Feature ?Designedforautomotiveapplicationsand AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelP

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF100N10F7

Marking:100N10F7;Package:TO-220FP;N-channel 100 V, 6.8 mΩ typ., 80 A STripFET? F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET?F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI100N10F7

Marking:100N10F7;Package:I2PAK;N-channel 100 V, 6.8 mΩ typ., 80 A STripFET? F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description TheseN-channelPowerMOSFETsutilizeSTripFET?F7technologywithan enhancedtrenc

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL100N3LLH6

Marking:100N3LLH6;Package:PowerFLAT;N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT? (5x6)STripFET? VI DeepGATE? Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness ■Lowgatedrivepowerlosses ■Verylowswitchinggatecharge Application ■Switchingapplications Description Thisproductutilizesthe6thgenerationofdesign rules

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL100N3LLH7

Marking:100N3LLH7;Package:PowerFLAT;N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT? (5x6) STripFET? VII DeepGATE? Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness Application ■Switchingapplications Description Thisdeviceutilizesthe7thgenerationofdesign rulesofST’sproprietarySTripFET?technology, withanewgatestructure.Th

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號:

    100

  • 制造商:

    TPI (Test Products Int)

  • 類別:

    測試與計(jì)量 > 設(shè)備 - 萬用表

  • 系列:

    100

  • 包裝:

  • 樣式:

    手持型

  • 類型:

    數(shù)字(DMM)

  • 顯示類型:

    LCD

  • 功能:

    電壓,電阻

  • 特性:

    自動(dòng)關(guān)閉

  • 測距:

    自動(dòng)

  • 響應(yīng):

    平均值

  • 等級:

    CAT III 600V

  • 描述:

    DMM AUTO RANGE W/BOOT

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
24+
DIP
5000
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原廠原裝,假一罰十
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YAGEO
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8080
只做原裝,質(zhì)量保證
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10000
原裝公司現(xiàn)貨
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全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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25
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原裝正品
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NS
24+
NA/
88
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
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更多100供應(yīng)商 更新時(shí)間2025-6-28 10:20:00