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02N80C3

Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

ISPD02N80C3

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤2.7? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA02N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA02N80C3

PowerMOSFET

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SPA02N80C3

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA02N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA02N80C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N80C3

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N80C3

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤2.7? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD02N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3

CoolMOSTMPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N80C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
INFINEON/英飛凌
2021+
TO-252A
17701
原裝進(jìn)口假一罰十
 詢價(jià)
INFINEON
12+
TO-220
2000
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
INFINEON
23+
TO-220
8890
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
INFINEON
2018+
6
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價(jià)
I
23+
SOT-252
10000
公司只做原裝正品
 詢價(jià)
17
24+
TO-251A
7500
原裝現(xiàn)貨假一賠十
 詢價(jià)
I
22+
SOT-252
6000
十年配單,只做原裝
 詢價(jià)
I
23+
SOT-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
INFINEON/英飛凌
23+
TO-220F
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
23+
TO-220F
8000
只做原裝現(xiàn)貨
 詢價(jià)
更多02N80C3供應(yīng)商 更新時(shí)間2025-1-7 8:36:00

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