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T25012SH

STANDARD TRIACS

IT(RMS)=25A VDRM=400Vto800V Highsurgecurrentcapability

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VACL25012

Terminal,Compression

HUBBELL

HUBBELL INCORPORATED

VACL25012BN

Terminal,Compression

HUBBELL

HUBBELL INCORPORATED

VAUL25012

AluminumCompressionTerminalfor250AL/CU,4/06/1ACSR,300COMPACT

HUBBELL

HUBBELL INCORPORATED

VAUL25012BN

AluminumCompressionTerminalfor250AL/CU,4/06/1ACSR,300COMPACT

HUBBELL

HUBBELL INCORPORATED

ZMP25012SX-F-WO

250WAC/DCITE&MedicalDualSafetyApprovals

ETA-USA

eta-usa

ZXTN25012EFH

12V,SOT23,NPNmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features ?Highpowerdissip

Zetex

Zetex Semiconductors

ZXTN25012EFH

12V,SOT23,NPNmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features ?Highpowerdissip

DIODES

Diodes Incorporated

ZXTN25012EFHTA

12V,SOT23,NPNmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features ?Highpowerdissip

DIODES

Diodes Incorporated

ZXTN25012EFL

12V,SOT23,NPNlowpowertransistor

Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features ?Highpeakcurrent ?Lowsaturationvoltage ?6Vreverseblockingvoltage Applications ?MOSFETandIGBTgatedriving

Zetex

Zetex Semiconductors

ZXTN25012EFL

12V,SOT23,NPNlowpowertransistor

Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features ?Highpeakcurrent ?Lowsaturationvoltage ?6Vreverseblockingvoltage Applications ?MOSFETandIGBTgatedriving

DIODES

Diodes Incorporated

ZXTN25012EFLTA

12V,SOT23,NPNlowpowertransistor

Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features ?Highpeakcurrent ?Lowsaturationvoltage ?6Vreverseblockingvoltage Applications ?MOSFETandIGBTgatedriving

DIODES

Diodes Incorporated

ZXTN25012EFLTA

12V,SOT23,NPNlowpowertransistor

Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features ?Highpeakcurrent ?Lowsaturationvoltage ?6Vreverseblockingvoltage Applications ?MOSFETandIGBTgatedriving

Zetex

Zetex Semiconductors

ZXTN25012EZ

12VNPNhighgaintransistor

Description PackagedintheSOT89outlinethisnewultrahighgain,lowsaturation12VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions Features ?6.5Acontinuouscurrent ?Upto15Apeakcurrent ?

Zetex

Zetex Semiconductors

ZXTN25012EZ

12VNPNhighgaintransistorinSOT89

Features ?BVCEO>12V ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN25012EZTA

12VNPNhighgaintransistorinSOT89

Features ?BVCEO>12V ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN25012EZTA

12VNPNhighgaintransistor

Description PackagedintheSOT89outlinethisnewultrahighgain,lowsaturation12VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions Features ?6.5Acontinuouscurrent ?Upto15Apeakcurrent ?

Zetex

Zetex Semiconductors

ZXTP25012EFH

12V,SOT23,PNPmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features ?Highpowerdissip

DIODES

Diodes Incorporated

ZXTP25012EFH

12V,SOT23,PNPmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features ?Highpowerdissip

Zetex

Zetex Semiconductors

ZXTP25012EFHTA

12V,SOT23,PNPmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features ?Highpowerdissip

DIODES

Diodes Incorporated

詳細(xì)參數(shù)

  • 型號(hào):

    T25012SH

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    STANDARD TRIACS

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ST
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23+
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11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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只做原裝現(xiàn)貨
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Apex Tool Group/Cooper Tools
2022+
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更多T25012SH供應(yīng)商 更新時(shí)間2025-1-1 14:10:00