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RFD12N06RLE中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

RFD12N06RLE
廠商型號(hào)

RFD12N06RLE

功能描述

12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs

文件大小

49.12 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-26 15:28:00

RFD12N06RLE規(guī)格書詳情

These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor drivers, relay drivers, and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

Features

? 12A, 60V

? rDS(ON) = 0.135?

? Electrostatic Discharge Protected

? UIS Rating Curve (Single Pulse)

? Design Optimized for 5V Gate Drive

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    RFD12N06RLE

  • 功能描述:

    MOSFET 60V/12a/0.135Ohm NCh Logic Level

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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