The RF MOSFET Line

RF Power

Field-Effect Transistors

N-Channel Enhancement-mode

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

? Guaranteed Performance

MRF175GV @ 28 V, 225 MHz (“V” Suffix)

Output Power — 200 Watts

Power Gain — 14 dB Typ

Efficiency — 65 Typ

MRF175GU @ 28 V, 400 MHz (“U” Suffix)

Output Power — 150 Watts

Power Gain — 12 dB Typ

Efficiency — 55 Typ

? 100 Ruggedness Tested At Rated Output Power

? Low Thermal Resistance

? Low Crss — 20 pF Typ @ VDS = 28 V

MRF175GU屬于分立半導體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻。Tyco Electronics制造生產(chǎn)的MRF175GU晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。