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MR606

Wirewound Resistor, Ultra Precision, Epoxy Molded, Radial Lead

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MSB606

SINGLEPHASE6.0AMPSURFACEMOUNTBRIDGERECTIFIERS

BYTESONIC

Bytesonic Electronics Co., Ltd.

MSB606

BRIDGERECTIFIER

Features ·Glasspassivatedjunction. ·Idealforprintedcircuitboard. ·Reliablelowcostconstructionutilizing moldedplastictechnique. ·Highsurgecurrentcapability. ·Hightemperaturesolderingguaranteed:

DAESAN

Daesan Electronics Corp.

MSB606M

SINGLE-PHASEGLASSPASSIVATEDSILICONBRIDGERECTIFIERVOLTAGERANGE50to1000VoltsCURRENT6.0Amperes

FEATURES *Lowleakage *Lowforwardvoltage *MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260'C

RECTRON

Rectron Semiconductor

MWP-606

SWITCHINGPOWERSUPPLYISO-9001CERTIFIEDMANUFACTURER

MEANWELLMean Well Enterprises Co., Ltd.

明緯電子明緯(廣州)電子有限公司

MWP-606A

104WTripleOutputSwitchingPowerSupply

MEANWELLMean Well Enterprises Co., Ltd.

明緯電子明緯(廣州)電子有限公司

MWP-606A

SWITCHINGPOWERSUPPLYISO-9001CERTIFIEDMANUFACTURER

MEANWELLMean Well Enterprises Co., Ltd.

明緯電子明緯(廣州)電子有限公司

NCP606

LDORegulator-LowIGND,CMOSwith/withoutEnableandwithEnhanced500mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDB606A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB606AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB606B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB606BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP606A

N-ChannelEnhancementModePowerFleidEffectTransistor

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NDP606A

N-ChannelEnhancementModePowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

NDP606A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP606AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP606B

N-ChannelEnhancementModePowerFleidEffectTransistor

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

NDP606B

N-ChannelEnhancementModePowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

NDP606B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP606BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
HONDA
2315+
本多工控連接器
3680
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20
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AMASS
24+
NA
10250
只做原裝現(xiàn)貨13691986278微信
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1年內(nèi)
Die
150000
類別:快恢復(fù)二極管
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MR
23+
DIP20
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
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NEC
24+
3000
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NEC
1736+
RELAY
8529
專營繼電器只做原裝正品假一賠十!
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NEC
16+
DIPSOP
5000
原裝現(xiàn)貨假一罰十
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NEC
23+
DIP
50000
全新原裝正品現(xiàn)貨,支持訂貨
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NEC
2022
DIP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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更多MR606供應(yīng)商 更新時(shí)間2024-11-5 16:41:00